TOSHIBA Intelligent Power Module Silicon N Channel IGBT
MIG400J101H
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
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MIG400J101H
High Power Switchin...
Description
MIG400J101H
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
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MIG400J101H
High Power Switching Applications Motor Control Applications
l Integrates inverter power circuits & control circuits (IGBT drive units, protection units for over-current, under-voltage & over temperature) in one package. l The electrodes are isolated from case. l High speed type IGBT : VCE (sat) = 2.5V (max) toff = 2.0µs (max) trr = 0.15µs (max) l Package dimensions l Weight : 510g : TOSHIBA 2-121A1A
Equivalent Circuit
1
2002-12-06
MIG400J101H
Maximum Ratings (Tj = 25°C)
Stage Characteristic Supply voltage Collector-emitter voltage Inverter Collector current Forward current Collector power dissipation Junction temperature Control supply voltage Control Input voltage Fault output voltage Fault output current Operating temperature Module Storage temperature range Isolation voltage Screw torque AC 1 minute, M6 Tc = 25°C, DC Tc = 25°C, DC Tc = 25°C ― VD-GND terminal IN-GND terminal FO-GND (L) terminal FO sink current ― ― Condition P-N power terminal ― Symbol VCC VCES IC IF PC Tj VD VIN VFO IFO TC Tstg VISO ―
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Ratings 450 600 400 400 1600 150 20 20 20 14 −20 ~ +100 −40 ~ +125 2500 3
Unit V V A A W °C V V V mA °C °C V Nm
Electrical Characteristics (Tj = 25°C)
a. Inverter Stage
Characteristic Collector cut-off current Symbol ICEX Test Condition VCE = 600V VD = 15V, IC = 400A VIN = 3V → 0V IF = 400A Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Min ― ― ― ― ― 1.4 ...
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