BUK9213-30A

BUK9213-30A TrenchMOS™ logic level FET Rev. 01 — 29 July 2002 M3D300 www.DataSheet4U.com Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Product availability: BUK9213-30A in SOT428 (D-PAK). 2. Features s s s s TrenchMOS™ technology Q101 compliant 175 °C rated Logic level compatible. 3. Applications s Automotive and general purpose power switching: x 12 V loads x Motors, lamps and solenoids. 4. Pinning information Table 1: Pin 1 2 3 mb Pinning - SOT428 (D-PAK), simplified outline and symbol Description gate (g) mb d Simplified outline Symbol drain (d) source (s) mounting base; connected to drain (d) g s MBB076 2 1 Top view 3 MBK091 SOT428 (D-PAK) Philips Semiconductors BUK9213-30A www.DataSheet4U.com TrenchMOS™ logic level FET 5. Quick reference data Table 2: VDS ID Ptot Tj RDSon Quick reference data Conditions Tmb = 25 °C; VGS = 5 V Tmb = 25 °C Tj = 25 °C; VGS = 5 V; ID = 25 A Tj = 25 °C; VGS = 4.5 V; ID = 25 A Tj = 25 °C; VGS = 10 V; ID = 25 A [1] Symbol Parameter drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance Typ 11 9 Max 30 75 150 175 13 14.4 11 Unit V A W °C mΩ mΩ mΩ 6. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID drain-source voltage (DC) drain-gate voltage (D...