VMM1500-0075P

www.DataSheet4U.com Dual Power MOSFET Module Phaseleg Configuration VMM 1500-0075P VDSS = 75 V ID25 = 1500 A RDS(on) = 0.55 mΩ Preliminary data 8 9 11 10 3 1 2 MOSFET T1 + T2 Symbol VDSS VGS ID25 ID80 IF25 IF80 TC = 25°C TC = 80°C (diode) TC = 25°C (diode) TC = 80°C ① ① ① ① Conditions TVJ = 25°C to 150°C Maximum Ratings 75 ±20 1500 1200 1500 1100 V V A A A A Features Trench MOSFETs – low RDSon – optimized intrinsic reverse diode package – low inductive current path – screw connection to high current main terminals – use of non interchangeable connectors for auxiliary terminals possible – Kelvin source terminals for easy drive – isolated DCB ceramic base plate Applications converters with high power density for – main and auxiliary AC drives of electric vehicles – 4 quadrant DC drives – power supplies with low input voltage, e.g. from fuel cells or solar cells Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 0.55 2 1.5 1.5 2480 330 940 60 170 320 200 1.2 90 0.12 1.6 0.8 mΩ 4 0.15 V mA mA µA nC nC nC ns ns ns ns V ns 0.06 K/W K/W RDSon VGSth IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf VF trr VGS = 10 V; ID = ID80 VDS = 20 V; ID = 10 mA VDS = VDSS; VGS = 0 V; TVJ = 25°C TVJ = 125°C VGS = ±20 V; VDS = 0 V VGS= 10 V; VDS = 60 V; ID = 500 A VGS= 10 V; VDS = 30 V; ID = 250 A; RG = 1 Ω (diode) IF = 750 A; VGS = 0 V (diode) IF = 200 A; -di/dt = 1000 A/µs; VDS = 30 V IXYS reserves the right to change limits, test condit...