VMM650-01F

VMM 650-01F www.DataSheet4U.com Dual Power HiPerFETTM Module Phaseleg Configuration VDSS = 100 V ID25 = 680 A RDS(on) = 1.8 mΩ Preliminary Data 8 9 11 10 6 7 NTC 3 1 2 MOSFET T1 + T2 Symbol VDSS VGS ID25 ID80 IF25 IF80 TC = 25°C TC = 80°C (diode) TC = 25°C (diode) TC = 80°C ① ① ① ① Conditions TVJ = 25°C to 150°C Maximum Ratings 100 ±20 680 500 680 500 V V A A A A Features HiPerFET TM technology – low RDSon – unclamped inductive switching (UIS) capability – dv/dt ruggedness – fast intrinsic reverse diode – low gate charge thermistor for internal temperature measurement package – low inductive current path – screw connection to high current main terminals – use of non interchangeable connectors for auxiliary terminals possible – Kelvin source terminals for easy drive – isolated DCB ceramic base plate Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 1.8 2 1.5 1 1440 200 680 150 250 400 200 1.2 300 0.12 1.5 2.2 mΩ 4 1 V mA mA µA nC nC nC ns ns ns ns V ns 0.08 K/W K/W RDSon VGSth IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf VF trr VGS = 10 V; ID = ID80 VDS = 20 V; ID = 30 mA VDS = 0.8 VDSS; VGS = 0 V; TVJ = 25°C TVJ = 125°C VGS = ±20 V; VDS = 0 V VGS= 10 V; VDS = 75 V; ID = ID80 Applications converters with high power density for – main and auxiliary AC drives of electric vehicles – 4 quadrant DC drives – power supplies VGS= 10 V; VDS = 0.5 VDSS; ID = ID80; RG = 0.47 Ω (diode) IF = 650 A; VGS = 0 V (diode) IF =...