PF48F3000P0ZBQ0

Intel StrataFlash® Embedded Memory (P30) 1-Gbit P30 Family Datasheet Product Features ■ High performance ■ Security — 85/88 ns initial access — One-Time Programmable Registers: — 40 MHz with zero wait states, 20 ns clock-todata output synchronous-burst read mode 64 unique factory device identifier bits 64 user-programmable OTP bits — 25 ns asynchronous-page read mode Additional 2048 user-programmable OTP bits — 4-, 8-, 16-, and continuous-word burst mode — Selectable OTP Space in Main Array: — Buffered Enhanced Factory Programming (BEFP) at 5 µs/byte (Typ) 4x32KB parameter blocks + 3x128KB main blocks (top or bottom configuration) — 1.8 V buffered programming at 7 µs/byte (Typ) — Absolute write protection: VPP = VSS ■ Architecture — Multi-Level Cell Technology: Highest Density at Lowest Cost — Power-transition erase/program lockout — Individual zero-latency block locking — Individual block lock-down — Asymmetrically-blocked architecture ■ Software — Four 32-KByte parameter blocks: top or — 20 µs (Typ) program suspend bottom configuration — 20 µs (Typ) erase suspend — 128-KByte main blocks — Intel® Flash Data Integrator optimized ■ Voltage and Power — VCC (core) voltage: 1.7 V – 2.0 V — VCCQ (I/O) voltage: 1.7 V – 3.6 V — Standby current: 55 µA (Typ) for 256-Mbit — Basic Command Set and Extended Command Set compatible — Common Flash Interface capable ■ Density and Packaging — 4-Word synchronous read current: 13 mA (Typ) at 40 MHz — 64/128/25...