K1S1616B1A

K1S1616B1A Document Title 1Mx16 bit Uni-Transistor Random Access Memory Preliminary UtRAM www.DataSheet4U.com Revision History Revision No. History 0.0 Initial Draft Draft Date October 6, 2003 Remark Preliminary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices. -1- Revision 0.0 October 2003 K1S1616B1A 1M x 16 bit Uni-Transistor CMOS RAM FEATURES Preliminary UtRAM www.DataSheet4U.com GENERAL DESCRIPTION The K1S1616B1A is fabricated by SAMSUNG′s advanced CMOS technology using one transistor memory cell. The device supports Industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The device also supports dual chip selection for user interface. Process Technology: CMOS Organization: 1M x16 bit Power Supply Voltage: 1.7V~2.1V Three State Outputs Compatible with Low Power SRAM Dual Chip selection support Package Type: 48-FBGA-6.00x7.00 PRODUCT FAMILY Power Dissipation Product Family Operating Temp. Vcc Range Speed Standby (ISB1, Max.) 80µA Operating (ICC2, Max.) 25mA PKG Type K1S1616B1A-I Industrial(-40~85°C) 1.7V~2.1V 70/85ns 48-FBGA-6.00x7.00 PIN DESCRIPTION 1 2 3 4 5 6 FUNCTIONAL BLOCK DIAGRAM Clk gen. Precharge circuit. A LB OE A0 A1 A2 CS2 Vcc Vss B I/O9 UB A3...