APT26GU30SA

TYPICAL PERFORMANCE CURVES APT26GU30K_SA APT26GU30K APT26GU30SA www.DataSheet4U.com 300V POWER MOS 7 IGBT ® TO-220 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. D2PAK G C C E G E Low Conduction Loss Low Gate Charge Ultrafast Tail Current shutoff MAXIMUM RATINGS Symbol VCES VGE VGEM IC1 IC2 ICM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Gate-Emitter Voltage Transient SSOA rated G C All Ratings: TC = 25°C unless otherwise specified. APT26GU30K_SA UNIT E 300 ±20 ±30 47 26 85 85A @ 300V 187 -55 to 150 300 Watts °C Amps Volts Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 100°C Pulsed Collector Current 1 @ TC = 150°C Switching Safe Operating Area @ TJ = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS Symbol BVCES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 250µA) Gate Threshold Voltage (VCE = VGE, I C = 1mA, Tj = 25°C) MIN TYP MAX UNIT 300 3 4.5 1.5 1.5 250 µA nA 4-2004 050-7466 Rev B 6 2.0 Collector-Emitter On Voltage (VGE = 15V, I C = 13A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 13A, Tj...