PEMD13

DISCRETE SEMICONDUCTORS www.DataSheet4U.com DATA SHEET PEMD13; PUMD13 NPN/PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 47 kΩ Product specification Supersedes data of 2001 Feb 27 2003 Oct 08 Philips Semiconductors www.DataSheet4U.com Product specification NPN/PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 47 kΩ FEATURES Built-in bias resistors Simplified circuit design Reduction of component count Reduced pick and place costs. APPLICATIONS Low current peripheral driver Replacement of general purpose transistors in digital applications Control of IC inputs. PEMD13; PUMD13 QUICK REFERENCE DATA SYMBOL VCEO IO TR1 TR2 R1 R2 PARAMETER collector-emitter voltage output current (DC) NPN PNP bias resistor bias resistor TYP. − − − − 4.7 47 MAX. 50 100 − − − − UNIT V mA − − kΩ kΩ DESCRIPTION NPN/PNP resistor-equipped transistors (see “Simplified outline, symbol and pinning” for package details). PRODUCT OVERVIEW TYPE NUMBER PEMD13 PUMD13 Note 1. * = p: Made in Hong Kong. * = t: Made in Malaysia. * = W: Made in China. SIMPLIFIED OUTLINE, SYMBOL AND PINNING PINNING TYPE NUMBER PEMD13 PUMD13 6 5 4 R1 TR1 R2 1 Top view 2 3 1 2 3 MAM468 PACKAGE MARKING CODE PHILIPS SOT666 SOT363 SC-88 EIAJ Z1 3*1(1) PNP/PNP COMPLEMENT PEMB13 PUMB13 NPN/NPN COMPLEMENT PEMH13 PUMH13 SIMPLIFIED OUTLINE AND SYMBOL PIN 6 5 4 DESCRIPTION emitter TR1 base TR1 collector TR2 emitter TR2 base TR2 collector TR1 1 2 3 R2 TR2 R1 4 5 6 2003 Oct 08 2 Philips Semiconductors www...