BLA0912-250R

BLA0912-250R Avionics LDMOS power transistor Rev. 01 — 3 March 2010 www.DataSheet4U.com Product data sheet 1. Product profile 1.1 General description Silicon N-channel enhancement mode LDMOS transistor encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the mounting flange. Table 1. Test information Typical RF performance measured in common source class-AB test circuit at PL = 250 W and 960 MHz to 1215 MHz frequency band. Th = 25 °C; Zth(j-h) = 0.15 K/W; unless otherwise specified. Mode of operation all modes TCAS Mode-S JTIDS f (MHz) 960 to 1215 1030 to 1090 1030 to 1090 1030 to 1090 960 to 1215 tp (μs) 100 32 128 340 δ % 10 2 1 VDS PL (V) 36 36 36 36 Gp ΔGp ηD 50 50 50 50 45 Pdroop(pulse) 0.1 0 0.1 0.2 0.2 tr 25 25 25 25 25 tf 6 6 6 6 6 Zth(j-h) ϕins(rel) (deg) ±5 ±5 ±5 ±5 ±5 0.18 0.07 0.15 0.20 0.45 (W) (dB) (dB) (%) (dB) 250 13.5 0.8 250 14.0 0.8 250 13.5 0.8 250 13.5 0.8 200 13.0 1.2 (ns) (ns) (K/W) 0.1 36 3300 22 CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features and benefits „ „ „ „ High power gain Easy power control Excellent ruggedness Source on mounting base eliminates DC isolators, reducing common mode inductance. 1.3 Applications „ Avionics transmitter applications in the 960 MHz to 1215 MHz frequency range such as Mode-S, TCAS and JTIDS, DME or TACAN. NXP Semiconductors www.DataSheet4U.com BLA0912-250R Avionics LD...