Part Number |
IXTT6N120 |
Manufacturers |
IXYS Corporation |
Logo |
|
Description |
High Voltage Power MOSFET |
Datasheet |
IXTT6N120 Datasheet (PDF) |
www.DataSheet4U.com
High Voltage Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
Preliminary Data Sheet
IXTH 6N120 IXTT 6N120
VDSS ID25
RDS(on)
= 1200 V = 6A = 2.6 Ω
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C
Maximum Ratings 1200 1200 ± 20 ± 30 6 24 6 25 500 5 300 -55 ... +150 150 -55 ... +150 V V V V A A A mJ mJ V/ns W °C °C °C °C g g
TO-247 AD (IXTH)
(TAB)
TO-268 (IXTT) Case Style
G G = Gate S = Source S D = Drain TAB = Drain
(TAB)
Features
z z z z
1.6 mm (0.062 in.) from case for 10 s Mounting torque TO-247 AD TO-268
300 6 4
1.13/10 Nm/lb.in.
z
International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low.