IXFH140N10P

Advance Technical Information www.DataSheet4U.com PolarHVTM HiPerFET IXFT 140N10P Power MOSFETs N-Channel Enhancement Mode Fast Intrinsic Diode; Avalanche Rated IXFH 140N10P VDSS ID25 RDS(on) = = = 100 V 140 A 11 mΩ TO-247 (IXFT) Symbol VDSS VDGR VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.062 in.) from case for 10 s Mounting torque TO-247 TO-268 (TO-247) TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω TC = 25°C 600 -55 ... +175 175 -55 ... +150 300 W °C °C °C °C Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Maximum Ratings 100 100 ± 20 140 75 300 60 80 2.5 10 V V V A A A A mJ J V/ns G = Gate S = Source D = Drain TAB = Drain G S D (TAB) G D D (TAB) S TO-268 (IXFT) Features z z 1.13/10 Nm/lb.in. 6.0 5.0 g g z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 μA VDS = VGS, ID = 4.0 mA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 175°C Characteristic Values Min. Typ. Max. 100 3.0 5.0 ±100 25 500 11 9 V V nA μA μA mΩ mΩ Advantages z z z Easy to mount Space savings High power density VGS = 10 V, ID = 0.5 ID25 VGS = 15 V, ID = 300 A Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 % © 2004 IXYS All rights reserv...