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EBE11UD8ABDA Dataheets PDF



Part Number EBE11UD8ABDA
Manufacturers Elpida Memory
Logo Elpida Memory
Description 1GB DDR2 SDRAM SO-DIMM
Datasheet EBE11UD8ABDA DatasheetEBE11UD8ABDA Datasheet (PDF)

PRELIMINARY DATA SHEET www.DataSheet4U.com 1GB DDR2 SDRAM SO-DIMM EBE11UD8ABDA (128M words × 64 bits, 2 Ranks) Description The EBE11UD8ABDA is 128M words × 64 bits, 2 ranks DDR2 SDRAM Small Outline Dual In-line Memory Module, mounting 16 pieces of 512M bits DDR2 SDRAM with sFBGA stacking technology. Read and write operations are performed at the cross points of the CK and the /CK. This high-speed data transfer is realized by the 4 bits prefetch-pipelined architecture. Data strobe (DQS and /DQS.

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PRELIMINARY DATA SHEET www.DataSheet4U.com 1GB DDR2 SDRAM SO-DIMM EBE11UD8ABDA (128M words × 64 bits, 2 Ranks) Description The EBE11UD8ABDA is 128M words × 64 bits, 2 ranks DDR2 SDRAM Small Outline Dual In-line Memory Module, mounting 16 pieces of 512M bits DDR2 SDRAM with sFBGA stacking technology. Read and write operations are performed at the cross points of the CK and the /CK. This high-speed data transfer is realized by the 4 bits prefetch-pipelined architecture. Data strobe (DQS and /DQS) both for read and write are available for high speed and reliable data bus design. By setting extended mode register, the on-chip Delay Locked Loop (DLL) can be set enable or disable. This module provides high density mounting without utilizing surface mount technology. Decoupling capacitors are mounted beside each SDRAM on the module board. Note: Do not push the components or drop the modules in order to avoid mechanical defects, which may result in electrical defects. Features • 200-pin socket type small outline dual in line memory module (SO-DIMM)  PCB height: 30.0mm  Lead pitch: 0.6mm  Lead-free • 1.8V power supply • Data rate: 533Mbps/400Mbps (max.) • 1.8V (SSTL_18 compatible) I/O • Double-data-rate architecture: two data transfers per clock cycle • Bi-directional, differential data strobe (DQS and /DQS) is transmitted/received with data, to be used in capturing data at the receiver • DQS is edge aligned with data for READs: centeraligned with data for WRITEs • Differential clock inputs (CK and /CK) • DLL aligns DQ and DQS transitions with CK transitions • Commands entered on each positive CK edge: data and data mask referenced to both edges of DQS • Four internal banks for concurrent operation (Component) • Data mask (DM) for write data • Burst lengths: 4, 8 • /CAS Latency (CL): 3, 4, 5 • Auto precharge operation for each burst access • Auto refresh and self refresh modes • 7.8µs average periodic refresh interval • Posted CAS by programmable additive latency for better command and data bus efficiency • Off-Chip-Driver Impedance Adjustment and On-DieTermination for better signal quality • /DQS can be disabled for single-ended Data Strobe operation. EO Document No. E0469E11 (Ver. 1.1) Date Published February 2004 (K) Japan URL: http://www.elpida.com L This Product became EOL in October, 2006. Elpida Memory, Inc. 2004 Pr od uc t EBE11UD8ABDA Ordering Information Data rate Mbps (max.) Component JEDEC speed bin (CL-tRCD-tRP) DDR2-533 (4-4-4) DDR2-400 (3-3-3) DDR2-400 (4-4-4) 200-pin SO-DIMM (lead-free) Gold 512M bits DDR2 SDRAM* 1 www.DataSheet4U.com Part number Package Contact pad Mounted devices EBE11UD8ABDA-5C-E 533 EBE11UD8ABDA-4A-E 400 EBE11UD8ABDA-4C-E 400 Note: 1. Please refer to 512Mb DDR2 datasheet (E0323E) for electrical characteristics. Pin Configurations Front side 1 pin 39 pin 41 pin 199 pin EO Front side Pin No. 1 3 5 7 9 11 13 15 17 19 21 23 25 27 29 31 33 35 37 39 41 43 45 47 49 Pin name VREF VSS DQ0 DQ1 VSS /DQS0.


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