EBE51ED8AEFA

DATA SHEET www.DataSheet4U.com 512MB Unbuffered DDR2 SDRAM DIMM EBE51ED8AEFA (64M words × 72 bits, 1 Rank) Description The EBE51ED8AEFA is 64M words × 72 bits, 1 rank DDR2 SDRAM unbuffered module, mounting 9 pieces of 512M bits DDR2 SDRAM sealed in FBGA (µBGA) package. Read and write operations are performed at the cross points of the CK and the /CK. This highspeed data transfer is realized by the 4 bits prefetchpipelined architecture. Data strobe (DQS and /DQS) both for read and write are available for high speed and reliable data bus design. By setting extended mode register, the on-chip Delay Locked Loop (DLL) can be set enable or disable. This module provides high density mounting without utilizing surface mount technology. Decoupling capacitors are mounted beside each FBGA (µBGA) on the module board. Note: Do not push the components or drop the modules in order to avoid mechanical defects, which may result in electrical defects. Features 240-pin socket type dual in line memory module (DIMM)  PCB height: 30.0mm  Lead pitch: 1.0mm  Lead-free 1.8V power supply Data rate: 533Mbps/400Mbps (max.) 1.8V (SSTL_18 compatible) I/O Double-data-rate architecture: two data transfers per clock cycle Bi-directional, differential data strobe (DQS and /DQS) is transmitted/received with data, to be used in capturing data at the receiver DQS is edge aligned with data for READs: centeraligned with data for WRITEs Differential clock inputs (CK and /CK) DLL aligns DQ a...