512MB Fully Buffered DIMM
PRELIMINARY DATA SHEET
www.DataSheet4U.com
512MB Fully Buffered DIMM
EBE51FD8AHFT EBE51FD8AHFE EBE51FD8AHFL
Specificat...
Description
PRELIMINARY DATA SHEET
www.DataSheet4U.com
512MB Fully Buffered DIMM
EBE51FD8AHFT EBE51FD8AHFE EBE51FD8AHFL
Specifications
Density: 512MB Organization 64M words × 72 bits, 1 rank Mounting 9 pieces of 512M bits DDR2 SDRAM sealed in FBGA Package 240-pin fully buffered, socket type dual in line memory module (FB-DIMM) PCB height: 30.35mm Lead pitch: 1.00mm Advanced Memory Buffer (AMB): 655-ball FCBGA Lead-free (RoHS compliant) Power supply DDR2 SDRAM: VDD = 1.8V ± 0.1V AMB: VCC = 1.5V + 0.075V/−0.045 Data rate: 667Mbps/533Mbps (max.) Four internal banks for concurrent operation (components) Interface: SSTL_18 Burst lengths (BL): 4, 8 /CAS Latency (CL): 3, 4, 5 Precharge: auto precharge option for each burst access Refresh: auto-refresh, self-refresh Refresh cycles: 8192 cycles/64ms Average refresh period 7.8µs at 0°C ≤ TC ≤ +85°C 3.9µs at +85°C < TC ≤ +95°C Operating case temperature range TC = 0°C to +95°C
Features
JEDEC standard Raw Card A Design Industry Standard Advanced Memory Buffer (AMB) High-speed differential point-to-point link interface at 1.5V (JEDEC draft spec) 14 north-bound (NB) high speed serial lanes 10 south-bound (SB) high speed serial lanes Various features/modes: MemBIST and IBIST test functions Transparent mode and direct access mode for DRAM testing Interface for a thermal sensor and status indicator Channel error detection and reporting Automatic DDR2 SDRAM bus and channel calibration ...
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