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UPD703210Y Dataheets PDF



Part Number UPD703210Y
Manufacturers NEC
Logo NEC
Description 32-Bit Single-Chip Microcontrollers
Datasheet UPD703210Y DatasheetUPD703210Y Datasheet (PDF)

www.DataSheet4U.com User’s Manual V850ES/KF1 , V850ES/KG1 , V850ES/KJ1 32-Bit Single-Chip Microcontrollers Hardware TM TM TM V850ES/KF1: µPD703208 µPD703208(A) µPD703208Y µPD703208Y(A) µPD703209 µPD703209(A) µPD703209Y µPD703209Y(A) µPD703210 µPD703210(A) µPD703210Y µPD703210Y(A) µPD70F3210 µPD70F3210(A) µPD70F3210Y µPD70F3210Y(A) V850ES/KG1: µPD703212 µPD703212(A) µPD703212Y µPD703212Y(A) µPD703213 µPD703213(A) µPD703213Y µPD703213Y(A) µPD703214 µPD703214(A) µPD703214Y µPD703214Y(A) µPD7.

  UPD703210Y   UPD703210Y



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www.DataSheet4U.com User’s Manual V850ES/KF1 , V850ES/KG1 , V850ES/KJ1 32-Bit Single-Chip Microcontrollers Hardware TM TM TM V850ES/KF1: µPD703208 µPD703208(A) µPD703208Y µPD703208Y(A) µPD703209 µPD703209(A) µPD703209Y µPD703209Y(A) µPD703210 µPD703210(A) µPD703210Y µPD703210Y(A) µPD70F3210 µPD70F3210(A) µPD70F3210Y µPD70F3210Y(A) V850ES/KG1: µPD703212 µPD703212(A) µPD703212Y µPD703212Y(A) µPD703213 µPD703213(A) µPD703213Y µPD703213Y(A) µPD703214 µPD703214(A) µPD703214Y µPD703214Y(A) µPD70F3214 µPD70F3214(A) µPD70F3214Y µPD70F3214Y(A) V850ES/KJ1: µPD703216 µPD703216(A) µPD703216Y µPD703216Y(A) µPD703217 µPD703217(A) µPD703217Y µPD703217Y(A) µPD70F3217 µPD70F3217(A) µPD70F3217Y µPD70F3217Y(A) Document No. U15862EJ3V0UD00 (3rd edition) Date Published January 2003 N CP(K) 2002 Printed in Japan [MEMO] www.DataSheet4U.com 2 User’s Manual U15862EJ3V0UD www.DataSheet4U.com NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS Note: Strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. Environmental control must be adequate. When it is dry, humidifier should be used. It is recommended to avoid using insulators that easily build static electricity. Semiconductor devices must be stored and transported in an anti-static container, static shielding bag or conductive material. All test and measurement tools including work bench and floor should be grounded. The operator should be grounded using wrist strap. Semiconductor devices must not be touched with bare hands. Similar precautions need to be taken for PW boards with semiconductor devices on it. 2 HANDLING OF UNUSED INPUT PINS FOR CMOS Note: No connection for CMOS device inputs can be cause of malfunction. If no connection is provided to the input pins, it is possible that an internal input level may be generated due to noise, etc., hence causing malfunction. CMOS devices behave differently than Bipolar or NMOS devices. Input levels of CMOS devices must be fixed high or low by using a pull-up or pull-down circuitry. Each unused pin should be connected to V DD or GND with a resistor, if it is considered to have a possibility of being an output pin. All handling related to the unused pins must be judged device by device and related specifications governing the devices. 3 STATUS BEFORE INITIALIZATION OF MOS DEVICES Note: Power-on does not necessarily define initial status of MOS device. Production process of MOS does not define the initial operation status of the device. Immediately after the power source is turned ON, the devices with reset function have not yet been initialized. Hence, power-on does not guarantee out-pin levels, I/O settings or contents of registers. Device is not initialized until the reset signal is received. Reset operation must be executed imme.


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