K6T1008U2C

K6T1008V2C, K6T1008U2C Family Document Title 128K x8 bit Low Power and Low Voltage CMOS Static RAM CMOS SRAM www.DataSheet4U.com Revision History Revision No. History 0.0 1.0 Initial draft Finalize - Increased ISB, IDR Commercial part = 10µA Industrial part = 20 µA Revise - Change speed bin KM68V1000C Family: 70/85ns → 70/100ns KM68U1000C Family: 70/100ns → 85/100ns - Improved operating current: 40mA → 35mA - Improved power dissipation PD: 0.7W → 1.0W - Improved standby current Extended/Industrial: 20 → 10 µA - VIL: 0.4V → 0.6V Draft Data July 3, 1996 December 16, 1996 Remark Preliminary Final 2.0 November 25, 1997 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserves the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices. 1 Revision 2.0 November 1997 K6T1008V2C, K6T1008U2C Family 128K x8 bit Low Power and Low Voltage CMOS Static RAM FEATURES Process Technology: 0.4 µm CMOS Organization: 128K x8 Power Supply Voltage: K6T1008V2C family: 3.0~3.6V K6T1008U2C family: 2.7~3.3V Low Data Retention Voltage: 2V(Min) Three state output and TTL Compatible Package Type: 32-SOP-525, 32-TSOP1-0820F/R, 32-TSOP1-0813.4F/R CMOS SRAM www.DataSheet4U.com GENERAL DESCRIPTION The K6T1008V2C and K6T1008U2C families are fabricated by SAMSUNG′s advanced CMOS process technology. The families suppo...