EN29SL800

www.DataSheet4U.com EN29SL800 EN29SL800 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 1.8 Volt-only FEATURES Single power supply operation - Full voltage range:1.65-2.2 volt for read and write operations. - Ideal for battery-powered applications. High performance - Access times as fast as 70 ns Low power consumption (typical values at 5 MHz) - 15 mA typical active read current - 15 mA typical program/erase current - 0.2 μA typical standby current Flexible Sector Architecture: - One 16-Kbyte, two 8-Kbyte, one 32-Kbyte, and fifteen 64-Kbyte sectors (byte mode) - One 8-Kword, two 4-Kword, one 16-Kword and fifteen 32-Kword sectors (word mode) Sector protection: - Hardware locking of sectors to prevent program or erase operations within individual sectors - Additionally, temporary Sector Unprotect allows code changes in previously locked sectors. High performance program/erase speed - Byte/Word program time: 5µs/7µs typical - Sector erase time: 500ms typical JEDEC Standard Embedded Erase and Program Algorithms JEDEC standard DATA# polling and toggle bits feature Single Sector and Chip Erase Sector Unprotect Mode Erase Suspend / Resume modes: Read or program another Sector during Erase Suspend Mode Low Vcc write inhibit < 1.2V Minimum 100K endurance cycle Package Options - 48-pin TSOP (Type 1) - 48-ball 6mm x 8mm FBGA - 48-ball 5mm x 6mm WFBGA - 48-ball 5mm x 6mm WLGA Commercial and industrial temperature Rang...