PHB45NQ15T

PHP/PHB45NQ15T N-channel TrenchMOS™ standard level FET Rev. 01 — 8 November 2004 www.DataSheet4U.com Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode field effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features s Low on-state resistance s Low thermal resistance s Fast switching s Low gate charge. 1.3 Applications s DC-to-DC primary side switching s AC-to-DC secondary side rectification. 1.4 Quick reference data s VDS ≤ 150 V s RDSon ≤ 42 mΩ s ID ≤ 45.1 A s Qgd = 10.3 nC (typ). 2. Pinning information Table 1: 1 2 3 mb gate drain source mounting base; connected to drain [1] Discrete pinning Simplified outline mb mb Pin Description Symbol D G mbb076 S 2 1 1 2 3 3 SOT78 (TO-220AB) [1] It is not possible to make a connection to pin 2 of the SOT404 package. SOT404 (D2-PAK) Philips Semiconductors PHP/PHB45NQ15T www.DataSheet4U.com N-channel TrenchMOS™ standard level FET 3. Ordering information Table 2: Ordering information Package Name PHP45NQ15T PHB45NQ15T TO-220AB D2-PAK Description Plastic single-ended package; heatsink mounted; 1 mounting hole; 3 lead TO-220AB Version SOT78 Type number Plastic single-ended surface mounted package (D2-PAK); 3 leads (one lead SOT404 cropped) 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID IDM Ptot Tstg Tj IS ISM drain-source voltage (DC) drain-gate voltage ...