ARF465A

D G S TO-247 ARF465A ARF465B www.DataSheet4U.com Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 300V 150W 60MHz The ARF465A and 465B comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 60 MHz. Specified 300 Volt, 40.68 MHz Characteristics: Output Power = 150 Watts. Gain = 13dB (Class C) Efficiency = 75% Low Cost Common Source RF Package. Low Vth thermal coefficient. Low Thermal Resistance. Optimized SOA for Superior Ruggedness. All Ratings: TC = 25°C unless otherwise specified. ARF465A/B UNIT Volts MAXIMUM RATINGS Symbol VDSS VDGO ID VGS PD RθJC TJ,TSTG TL Parameter Drain-Source Voltage Drain-Gate Voltage Continuous Drain Current @ TC = 25°C Gate-Source Voltage Total Power Dissipation @ TC = 25°C Junction to Case Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. 1200 1200 6 ±30 250 0.50 -55 to 150 °C Amps Volts Watts °C/W 300 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA) 1 MIN TYP MAX UNIT Volts 1200 7 25 µA VDS(ON) On State Drain Voltage IDSS IGSS gfs VGS(TH) (I D(ON) = 3A, VGS = 10V) Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Forward Transconducta...