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PHB193NQ06T

NXP Semiconductors

N-channel TrenchMOS standard level FET

www.DataSheet4U.com PHP/PHB193NQ06T N-channel TrenchMOS™ standard level FET Rev. 01 — 06 May 2004 Product data 1. Prod...


NXP Semiconductors

PHB193NQ06T

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www.DataSheet4U.com PHP/PHB193NQ06T N-channel TrenchMOS™ standard level FET Rev. 01 — 06 May 2004 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features s Standard level threshold s Very low on-state resistance. 1.3 Applications s Motors, lamps, solenoids s DC-to-DC converters s Uninterruptible power supplies s General industrial applications. 1.4 Quick reference data s VDS ≤ 55 V s Ptot ≤ 300 W s ID ≤ 75 A s RDSon ≤ 4 mΩ. 2. Pinning information Table 1: 1 2 3 mb Pinning - SOT78 (TO-220AB) and SOT404 (D2-PAK), simplified outline and symbol Simplified outline [1] Pin Description gate (g) drain (d) source (s) mounting base; connected to drain (d) Symbol mb d mb g s MBB076 2 1 MBK106 3 MBK116 1 2 3 SOT78 (TO-220AB) [1] SOT404 (D2-PAK) It is not possible to make connection to pin 2 of the SOT404 package. Philips Semiconductors PHP/PHB193NQ06T www.DataSheet4U.com N-channel TrenchMOS™ standard level FET 3. Ordering information Table 2: Ordering information Package Name PHP193NQ06T PHB193NQ06T TO-220AB D2-PAK Description Version Plastic single-ended package; heatsink mounted; 1 mounting hole; 3 leads SOT78 Plastic single-ended surface mounted package; 3 leads (one lead cropped) SOT404 Type number 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID IDM Ptot Tstg Tj IS I...




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