IXFR40N50Q2

www.DataSheet4U.com HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, Low Qg Low Rg, High dv/dt, Low trr Preliminary Data Sheet Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL FC Weight 1.6 mm (0.063 in) from case for 10 s Mounting force Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C IXFR40N50Q2 VDSS = 500 V = 29 A ID25 RDS(on) = 0.17 Ω trr ≤ 250 ns Maximum Ratings 500 500 ± 30 ± 40 29 160 40 50 2.5 20 320 -55 ... +150 150 -55 ... +150 300 22...130/5...30 5 V V V V A A A mJ J V/ns W °C °C °C °C N/lb. g ISOPLUS247 (IXFR) E153432 G (TAB) D S D = Drain TAB = Isolated G = Gate S = Source Features z z z z z z Double metal process for low gate resistance International standard packages Epoxy meet UL 94 V-0, flammability classification Low RDS (on), low Qg Avalanche energy and current rated Fast intrinsic rectifier Applications z z z z Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 500 2.5 5.0 ±200 TJ = 25°C TJ = 125°C 25 1 0.17 V V nA µA mA Ω z DC-DC converters Switched-mode and resonant-mode power supplies, >500kHz switching DC choppers Pulse generation Laser drivers Advantages z z z VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 4 mA VGS = ±30 VDC, VDS = 0 ...