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PolarHVTM HiPerFET Power MOSFET
ISOPLUS247TM
N-Channel Enhancement Avalanche Rated Fast Intrinsic Diode
IXFR 44N50P
VDSS ID25 trr
RDS(on)
(Electrically Isolated Back Surface)
= = ≤ ≤
500 V 24 A 150 m Ω 200 ns
Symbol VDSS VDGR VGSM VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL FC Weight
Test Conditions TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ Transient Continuous TC = 25° C TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C TC = 25° C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤150° C, RG = 10 Ω TC = 25° C
Maximum Ratings 500 500 ±40 ±30 24 132 44 55 1.7 10 208 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns W °C °C °C °C V~ N/lb g
ISOPLUS247 (IXFR) E153432
G
D
S
ISOLATED TAB
D = Drain
G = Gate S = Source
Features
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International standard isolated package UL recognized package Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic diode
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1.6 mm (0.062 in.) from case for 10 s 50/60 Hz, RMS, 1 minute Mounting Force
300 2500 20..120 / 4.5..25 5
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Advantages Symbol Test Conditions (TJ = 25° C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 4 mA VGS = ±30 VDC, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = 22 A TJ = 125° C Characteristic Values Min. Typ. Max. 500 2.5 5.0 ±100 25 500 150 V V nA µA µA mΩ
DS99319E(03/06)
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Easy to mount Space savings High power density
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IXFR 44N50P
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Symbol
Test Conditions
Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. 32 5440 S pF pF pF ns ns ns ns nC nC nC 0.6 ° C/W 0.15 ° C/W
ISOPLUS247 Outline
gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS
VDS= 20 V; ID = 22 A, Note 1 VGS = 0 V, VDS = 25 V, f = 1 MHz
639 40 25
VGS = 10 V, VDS = 0.5 VDSS, ID = 22 A RG = 3 Ω (External)
27 70 18 98
VGS= 10 V, VDS = 0.5 VDSS, ID = 22 A
35 30
Source-Drain Diode Symbol IS ISM VSD trr QRM IRM Test Conditions VGS = 0 V Repetitive IF = IS, VGS = 0 V, Note 1 IF = 22 A, -di/dt = 100 A/µs VR = 100V
Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. 30 132 1.5 200 0.6 6.0 A A V ns µC A
Notes: 1. Pulse test, t ≤300 ms, duty cycle d ≤2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,683,344 6,727,585 6,534,343 6,710,405B2 6,759,692 6,583,505 6,710,463 6,771,478 B2
IXFR 44N50P
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Fig. 1. Output Characteristics @ 25ºC
45 40 35 30 25 20 15 10 5 0 0 1 2 3 4 5 6 7 5V 6V V GS = 10V 7V 100 90 80 7.