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IXFR44N50P Dataheets PDF



Part Number IXFR44N50P
Manufacturers IXYS Corporation
Logo IXYS Corporation
Description PolarHV HiPerFET Power MOSFET ISOPLUS247
Datasheet IXFR44N50P DatasheetIXFR44N50P Datasheet (PDF)

www.DataSheet4U.com PolarHVTM HiPerFET Power MOSFET ISOPLUS247TM N-Channel Enhancement Avalanche Rated Fast Intrinsic Diode IXFR 44N50P VDSS ID25 trr RDS(on) (Electrically Isolated Back Surface) = = ≤ ≤ 500 V 24 A 150 m Ω 200 ns Symbol VDSS VDGR VGSM VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL FC Weight Test Conditions TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ Transient Continuous TC = 25° C TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C TC = 25° C .

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www.DataSheet4U.com PolarHVTM HiPerFET Power MOSFET ISOPLUS247TM N-Channel Enhancement Avalanche Rated Fast Intrinsic Diode IXFR 44N50P VDSS ID25 trr RDS(on) (Electrically Isolated Back Surface) = = ≤ ≤ 500 V 24 A 150 m Ω 200 ns Symbol VDSS VDGR VGSM VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL FC Weight Test Conditions TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ Transient Continuous TC = 25° C TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C TC = 25° C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤150° C, RG = 10 Ω TC = 25° C Maximum Ratings 500 500 ±40 ±30 24 132 44 55 1.7 10 208 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns W °C °C °C °C V~ N/lb g ISOPLUS247 (IXFR) E153432 G D S ISOLATED TAB D = Drain G = Gate S = Source Features l l International standard isolated package UL recognized package Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic diode l 1.6 mm (0.062 in.) from case for 10 s 50/60 Hz, RMS, 1 minute Mounting Force 300 2500 20..120 / 4.5..25 5 l l l Advantages Symbol Test Conditions (TJ = 25° C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 4 mA VGS = ±30 VDC, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = 22 A TJ = 125° C Characteristic Values Min. Typ. Max. 500 2.5 5.0 ±100 25 500 150 V V nA µA µA mΩ DS99319E(03/06) l l l Easy to mount Space savings High power density © 2006 IXYS All rights reserved IXFR 44N50P www.DataSheet4U.com Symbol Test Conditions Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. 32 5440 S pF pF pF ns ns ns ns nC nC nC 0.6 ° C/W 0.15 ° C/W ISOPLUS247 Outline gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS VDS= 20 V; ID = 22 A, Note 1 VGS = 0 V, VDS = 25 V, f = 1 MHz 639 40 25 VGS = 10 V, VDS = 0.5 VDSS, ID = 22 A RG = 3 Ω (External) 27 70 18 98 VGS= 10 V, VDS = 0.5 VDSS, ID = 22 A 35 30 Source-Drain Diode Symbol IS ISM VSD trr QRM IRM Test Conditions VGS = 0 V Repetitive IF = IS, VGS = 0 V, Note 1 IF = 22 A, -di/dt = 100 A/µs VR = 100V Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. 30 132 1.5 200 0.6 6.0 A A V ns µC A Notes: 1. Pulse test, t ≤300 ms, duty cycle d ≤2 % IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,683,344 6,727,585 6,534,343 6,710,405B2 6,759,692 6,583,505 6,710,463 6,771,478 B2 IXFR 44N50P www.DataSheet4U.com Fig. 1. Output Characteristics @ 25ºC 45 40 35 30 25 20 15 10 5 0 0 1 2 3 4 5 6 7 5V 6V V GS = 10V 7V 100 90 80 7.


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