PBSS5160K
60 V, 1 A PNP low VCEsat (BISS) transistor
Rev. 03 — 6 October 2008
www.DataSheet4U.com
Product data sheet
...
PBSS5160K
60 V, 1 A
PNP low VCEsat (BISS)
transistor
Rev. 03 — 6 October 2008
www.DataSheet4U.com
Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS)
transistor in a small SOT346 (SC-59A) Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS4160K.
1.2 Features
I I I I I Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional
transistors
1.3 Applications
I I I I I High voltage DC-to-DC conversion High voltage MOSFET gate driving High voltage motor control High voltage power switches (e.g. motors, fans) Automotive applications
1.4 Quick reference data
Table 1. Symbol VCEO IC ICM RCEsat
[1] [2]
Quick reference data Parameter collector-emitter voltage collector current peak collector current collector-emitter saturation resistance single pulse; tp ≤ 1 ms IC = −1 A; IB = −100 mA
[2]
Conditions open base
[1]
Min -
Typ 255
Max −60 −1 −2 340
Unit V A A mΩ
Device mounted on a ceramic PCB, Al2O3, standard footprint. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
NXP Semiconductors
PBSS5160K
www.DataSheet4U.com
60 V, 1 A
PNP low VCEsat (BISS)
transistor
2. Pinning information
Table 2. Pin 1 2 3 Pinning Description base emitter collector
1 2 3 1 2
sym013
Simplified outline
Graphic symbol
3
3. Ordering information
Ta...