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RMPA0959

Fairchild Semiconductor

CDMA and CDMA2000-1X PowerEdge Power Amplifier Module

RMPA0959 CDMA and CDMA2000-1X PowerEdge™ Power Amplifier Module www.DataSheet4U.com March 2006 RMPA0959 CDMA and CDMA2...


Fairchild Semiconductor

RMPA0959

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Description
RMPA0959 CDMA and CDMA2000-1X PowerEdge™ Power Amplifier Module www.DataSheet4U.com March 2006 RMPA0959 CDMA and CDMA2000-1X PowerEdge™ Power Amplifier Module Features ■ Single positive-supply operation with low power and shutdown modes ■ 39% CDMA efficiency at +28dBm average output power ■ 53% AMPS mode efficiency at +31dBm output power ■ Lead-free RoHS compliant 4 x 4 x 1.5mm leadless ■ Internally matched to 50Ω and DC blocked RF input/output ■ Meets CDMA2000-1XRTT performance requirements General Description The RMPA0959 power amplifier module (PAM) is designed for cellular band AMPS, CDMA and CDMA2000-1X applications. The 2 stage PAM is internally matched to 50Ω to minimize the use of external components and features a low-power mode to reduce standby current and DC power consumption during peak phone usage. High power-added efficiency and excellent linearity are achieved using our Heterojunction Bipolar Transistor (HBT) process. Device Functional Block Diagram PA MODULE Vcc1 (5) COLLECTOR BIAS 1 GND (3, 7, 9,10,11) INTERSTAGE MATCH INPUT MATCHING NETWORK OUTPUT MATCHING NETWORK RF IN (4) INPUT STAGE INPUT STAGE BIAS MMIC OUTPUT STAGE OUTPUT STAGE BIAS RF OUT (8) VCC=3.4V (nom) VREF=2.85V (nom) 824-849 MHz 50Ω I/O Vref (1) BIAS CONTROL COLLECTOR BIAS 2 Vcc2 (6) Vmode (2) ©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com RMPA0959 Rev. F RMPA0959 CDMA and CDMA2000-1X PowerEdge™ Power Amplifier Module www.DataSheet4U.com Absolute Ratings1 Sy...




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