Inchange Semiconductor
Product Specification
www.DataSheet4U.com
Silicon NPN Power Transistors
2SD350A
DESCRIPTION ·...
Inchange Semiconductor
Product Specification
www.DataSheet4U.com
Silicon
NPN Power
Transistors
2SD350A
DESCRIPTION ·With TO-3 package ·High voltage ,high speed APPLICATIONS ·For color TV horizontal deflection output applications
PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION
·
Absolute maximum ratings(Ta=℃)
SYMBOL VCBO VCEO VEBO IC ICM PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Total power dissipation Junction temperature Storage temperature TC=90℃ CONDITIONS Open emitter Open base Open collector VALUE 1500 700 5 5 7 22 150 -55~150 UNIT V V V A A W ℃ ℃
Inchange Semiconductor
Product Specification
www.DataSheet4U.com
Silicon
NPN Power
Transistors
2SD350A
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.1A; IB=0
700
V
V(BR)EBO
Emitter-base breakdown votage
IE=10mA; IC=0
5
V
VCEsat
Collector-emitter saturation voltage
IC=4.5 A;IB=2A
1.0
V
VBEsat
Base-emitter saturation voltage
IC=4.5 A;IB=2A
1.3
V μA
ICBO
Collector cut-off current
VCB=800V;IE=0
10
hFE-1
DC current gain
IC=1A ; VCE=5V
8
hFE-2
DC current gain
IC=4A ; VCE=10V
3
2
Inchange Semiconductor
Product Specification
www.DataSheet4U.com
Silicon
NPN Power
Transistors
PACKAGE OUTLINE
2SD350A
Fig.2 Outline dimensions
3
...