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M3D109
PBSS4520X 20 V, 5 A NPN low VCEsat (BISS) transistor
Product specification Supersedes data of 2004 Jun 11 2004 Nov 08
Philips Semiconductors
www.DataSheet4U.com Product specification
20 V, 5 A NPN low VCEsat (BISS) transistor
FEATURES • High hFE and low VCEsat at high current operation • High collector current capability: IC maximum 5 A • Higher efficiency leading to less heat generation. APPLICATIONS • Medium power peripheral drivers, e.g. fans and motors • Strobe flash units for DSC and mobile phones • Inverter applications, e.g. TFT displays • Power switch for LAN and ADSL systems • Medium power DC-to-DC conversion • Battery chargers. DESCRIPTION NPN low VCEsat BISS transistor in a SOT89 (SC-62) plastic package. PNP complement: PBSS5520X. PINNING PIN 1 2 3 emitter collector base QUICK REFERENCE DATA SYMBOL VCEO IC ICM RCEsat PARAMETER
PBSS4520X
MAX. UNIT 20 5 10 44 V A A mΩ
collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance
DESCRIPTION
2
MARKING
3
TYPE NUMBER PBSS4520X Note 1. * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China. ORDERING INFORMATION *1F
MARKING CODE(1)
1
sym042
3
2
1
Fig.1 Simplified outline (SOT89) and symbol.
PACKAGE TYPE NUMBER NAME PBSS4520X SC-62 DESCRIPTION plastic surface mounted package; collector pad for good heat transfer; 3 leads VERSION SOT89
2004 Nov 08
2
Philips Semiconductors
www.DataSheet4U.com Product specification
20 V, 5 A NPN low VCEsat (BISS) transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICRM ICM IB IBM Ptot PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) repetitive peak collector current peak collector current base current (DC) peak base current total power dissipation tp ≤ 1 ms Tamb ≤ 25 °C notes 1 and 2 note 2 note 3 note 4 note 5 Tstg Tj Tamb Notes 1. Operated under pulsed conditions: pulse width tp ≤ 10 ms; duty cycle δ ≤ 0.2. storage temperature junction temperature ambient temperature − − − − − −65 − −65 notes 1 and 2 tp ≤ 1 ms CONDITIONS open emitter open base open collector − − − − − − − − MIN.
PBSS4520X
MAX. 20 20 5 5 7 10 1 2 2.5 0.55 1 1.4 1.6 +150 150 +150 V V V A A A A A W W W W W
UNIT
°C °C °C
2. Device mounted on a printed-circuit board, single-sided copper, tin-plated and standard footprint. 3. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 1 cm2. 4. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 6 cm2. 5. Device mounted on a 7 cm2 ceramic printed-circuit board, 1 cm2 single-sided copper and tin-plated. For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
2004 Nov 08
3
Philips Semiconductors
www.DataSheet4U.com Product specification
20 V, 5 A NPN low VCEsat (BISS) transistor
PBSS4520X
1600 Ptot (mW) 1200
(2) (1)
001aaa229
800
(3)
400
0 −50
0
50
100
150 200 Tamb (°C)
(1) FR4 PCB; 6 cm2 mounting pad for collector. (2) FR4 PCB; 1 cm2 mounting pad for collector. (3) FR4 PCB; standard footprint.
Fig.2 Power derating curves.
2004 Nov 08
4
Philips Semiconductors
www.DataSheet4U.com Product specification
20 V, 5 A NPN low VCEsat (BISS) transistor
THERMAL CHARACTERISTICS SYMBOL Rth(j-a) PARAMETER thermal resistance from junction to ambient CONDITIONS in free air notes 1 and 2 note 2 note 3 note 4 note 5 Rth(j-s) Notes 1. Operated under pulsed conditions: pulse width tp ≤ 10 ms; duty cycle δ ≤ 0.2. thermal resistance from junction to soldering point 50 225 125 90 80 16 VALUE
PBSS4520X
UNIT K/W K/W K/W K/W K/W K/W
2. Device mounted on a printed-circuit board, single-sided copper, tin-plated and standard footprint. 3. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 1 cm2. 4. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 6 cm2. 5. Device mounted on a 7 cm2 ceramic printed-circuit board, 1 cm2 single-sided copper and tin-plated. For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
103 Zth (K/W) 102
(1) (2) (3) (4) (5) (6)
006aaa232
10
(7) (8) (9)
1
(10)
10−1 10−5
10−4
10−3
10−2
10−1
1
10
102 tp (s)
103
Mounted on FR4 printed-circuit board; standard footprint. (1) δ = 1. (2) δ = 0.75. (3) δ = 0.5. (4) δ = 0.33. (5) δ = 0.2. (6) δ = 0.1. (7) δ = 0.05. (8) δ = 0.02. (9) δ = 0.01. (10) δ = 0.
Fig.3 Transient thermal impedance as a function of pulse time; typical values.
2004 Nov 08
5
Philips Semiconductors
www.DataSheet4U.com Product specification
20 V, 5 A NPN low VCEsat (BISS) transistor
PBSS4520X
103 Zth (K/W)
(1)
006aaa233
102
(3) (5) (6)
(2) (4)
10
(7) (8) (9)
1
(10)
10−.