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PBSS4520X Dataheets PDF



Part Number PBSS4520X
Manufacturers NXP Semiconductors
Logo NXP Semiconductors
Description 20V 5A NPN low VCEsat (BISS) transistor
Datasheet PBSS4520X DatasheetPBSS4520X Datasheet (PDF)

DISCRETE SEMICONDUCTORS www.DataSheet4U.com DATA SHEET ook, halfpage M3D109 PBSS4520X 20 V, 5 A NPN low VCEsat (BISS) transistor Product specification Supersedes data of 2004 Jun 11 2004 Nov 08 Philips Semiconductors www.DataSheet4U.com Product specification 20 V, 5 A NPN low VCEsat (BISS) transistor FEATURES • High hFE and low VCEsat at high current operation • High collector current capability: IC maximum 5 A • Higher efficiency leading to less heat generation. APPLICATIONS • Medium power.

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DISCRETE SEMICONDUCTORS www.DataSheet4U.com DATA SHEET ook, halfpage M3D109 PBSS4520X 20 V, 5 A NPN low VCEsat (BISS) transistor Product specification Supersedes data of 2004 Jun 11 2004 Nov 08 Philips Semiconductors www.DataSheet4U.com Product specification 20 V, 5 A NPN low VCEsat (BISS) transistor FEATURES • High hFE and low VCEsat at high current operation • High collector current capability: IC maximum 5 A • Higher efficiency leading to less heat generation. APPLICATIONS • Medium power peripheral drivers, e.g. fans and motors • Strobe flash units for DSC and mobile phones • Inverter applications, e.g. TFT displays • Power switch for LAN and ADSL systems • Medium power DC-to-DC conversion • Battery chargers. DESCRIPTION NPN low VCEsat BISS transistor in a SOT89 (SC-62) plastic package. PNP complement: PBSS5520X. PINNING PIN 1 2 3 emitter collector base QUICK REFERENCE DATA SYMBOL VCEO IC ICM RCEsat PARAMETER PBSS4520X MAX. UNIT 20 5 10 44 V A A mΩ collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance DESCRIPTION 2 MARKING 3 TYPE NUMBER PBSS4520X Note 1. * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China. ORDERING INFORMATION *1F MARKING CODE(1) 1 sym042 3 2 1 Fig.1 Simplified outline (SOT89) and symbol. PACKAGE TYPE NUMBER NAME PBSS4520X SC-62 DESCRIPTION plastic surface mounted package; collector pad for good heat transfer; 3 leads VERSION SOT89 2004 Nov 08 2 Philips Semiconductors www.DataSheet4U.com Product specification 20 V, 5 A NPN low VCEsat (BISS) transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICRM ICM IB IBM Ptot PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) repetitive peak collector current peak collector current base current (DC) peak base current total power dissipation tp ≤ 1 ms Tamb ≤ 25 °C notes 1 and 2 note 2 note 3 note 4 note 5 Tstg Tj Tamb Notes 1. Operated under pulsed conditions: pulse width tp ≤ 10 ms; duty cycle δ ≤ 0.2. storage temperature junction temperature ambient temperature − − − − − −65 − −65 notes 1 and 2 tp ≤ 1 ms CONDITIONS open emitter open base open collector − − − − − − − − MIN. PBSS4520X MAX. 20 20 5 5 7 10 1 2 2.5 0.55 1 1.4 1.6 +150 150 +150 V V V A A A A A W W W W W UNIT °C °C °C 2. Device mounted on a printed-circuit board, single-sided copper, tin-plated and standard footprint. 3. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 1 cm2. 4. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 6 cm2. 5. Device mounted on a 7 cm2 ceramic printed-circuit board, 1 cm2 single-sided copper and tin-plated. For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”. 2004 Nov 08 3 Philips Semiconductors www.DataSheet4U.com Product specification 20 V, 5 A NPN low VCEsat (BISS) transistor PBSS4520X 1600 Ptot (mW) 1200 (2) (1) 001aaa229 800 (3) 400 0 −50 0 50 100 150 200 Tamb (°C) (1) FR4 PCB; 6 cm2 mounting pad for collector. (2) FR4 PCB; 1 cm2 mounting pad for collector. (3) FR4 PCB; standard footprint. Fig.2 Power derating curves. 2004 Nov 08 4 Philips Semiconductors www.DataSheet4U.com Product specification 20 V, 5 A NPN low VCEsat (BISS) transistor THERMAL CHARACTERISTICS SYMBOL Rth(j-a) PARAMETER thermal resistance from junction to ambient CONDITIONS in free air notes 1 and 2 note 2 note 3 note 4 note 5 Rth(j-s) Notes 1. Operated under pulsed conditions: pulse width tp ≤ 10 ms; duty cycle δ ≤ 0.2. thermal resistance from junction to soldering point 50 225 125 90 80 16 VALUE PBSS4520X UNIT K/W K/W K/W K/W K/W K/W 2. Device mounted on a printed-circuit board, single-sided copper, tin-plated and standard footprint. 3. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 1 cm2. 4. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 6 cm2. 5. Device mounted on a 7 cm2 ceramic printed-circuit board, 1 cm2 single-sided copper and tin-plated. For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”. 103 Zth (K/W) 102 (1) (2) (3) (4) (5) (6) 006aaa232 10 (7) (8) (9) 1 (10) 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 tp (s) 103 Mounted on FR4 printed-circuit board; standard footprint. (1) δ = 1. (2) δ = 0.75. (3) δ = 0.5. (4) δ = 0.33. (5) δ = 0.2. (6) δ = 0.1. (7) δ = 0.05. (8) δ = 0.02. (9) δ = 0.01. (10) δ = 0. Fig.3 Transient thermal impedance as a function of pulse time; typical values. 2004 Nov 08 5 Philips Semiconductors www.DataSheet4U.com Product specification 20 V, 5 A NPN low VCEsat (BISS) transistor PBSS4520X 103 Zth (K/W) (1) 006aaa233 102 (3) (5) (6) (2) (4) 10 (7) (8) (9) 1 (10) 10−.


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