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NESG2107M33 Dataheets PDF



Part Number NESG2107M33
Manufacturers California Eastern Labs
Logo California Eastern Labs
Description NECs NPN SILICON TRANSISTOR
Datasheet NESG2107M33 DatasheetNESG2107M33 Datasheet (PDF)

PRELIMINARY DATA SHEET www.DataSheet4U.com NEC's NPN SILICON TRANSISTOR NESG2107M33 FEATURES • • • IDEAL FOR OSC., HIGH-GAIN AMPLIFICATION APPLICATIONS HIGH BREAKDOWN VOLTAGE TECHNOLOGY FOR SIGE TRANSISTORS 3-PIN SUPER LEAD-LESS MINIMOLD (M33) PACKAGE ORDERING INFORMATION PART NUMBER NESG2107M33-A NESG2107M33-T3-A QUANTITY 50 pcs (Non reel) 10 kpcs/reel SUPPLYING FORM • 8 mm wide embossed taping • Pin 2 (Base) face the perforation side of the tape Remark To order evaluation samples, contact.

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PRELIMINARY DATA SHEET www.DataSheet4U.com NEC's NPN SILICON TRANSISTOR NESG2107M33 FEATURES • • • IDEAL FOR OSC., HIGH-GAIN AMPLIFICATION APPLICATIONS HIGH BREAKDOWN VOLTAGE TECHNOLOGY FOR SIGE TRANSISTORS 3-PIN SUPER LEAD-LESS MINIMOLD (M33) PACKAGE ORDERING INFORMATION PART NUMBER NESG2107M33-A NESG2107M33-T3-A QUANTITY 50 pcs (Non reel) 10 kpcs/reel SUPPLYING FORM • 8 mm wide embossed taping • Pin 2 (Base) face the perforation side of the tape Remark To order evaluation samples, contact your nearby sales office. The unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA =+25ºC) PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO IC Ptot Note RATINGS 13.0 5.0 1.5 100 130 150 −65 to +150 UNIT V V V mA mW °C °C Tj Tstg Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PCB Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. California Eastern Laboratories NESG2107M33 ELECTRICAL CHARACTERISTICS (TA =+25ºC) PARAMETER DC Characteristics Collector Cut-off Current Emitter Cut-off Current DC Current Gain RF Characteristics Reverse Transfer Capacitance Noise Figure Associated Gain Gain Bandwidth Product (1) Gain Bandwidth Product (2) Insertion Power Gain (1) Insertion Power Gain (2) Cre Note 2 NF Ga fT fT |S21e| 2 www.DataSheet4U.com MIN. TYP. MAX. UNIT SYMBOL TEST CONDITIONS ICBO IEBO hFE Note 1 VCB = 5 V, IE = 0 mA VEB = 0.5 V, IC = 0 mA VCE = 1 V, IC = 5 mA − − 140 − − 180 100 100 220 nA nA − VCB = 1 V, IE = 0 mA, f = 1 MHz VCE = 1 V, IC = 5 mA, f = 2 GHz, ZS = Zopt VCE = 1 V, IC = 5 mA, f = 2 GHz, ZS = Zopt VCE = 1 V, IC = 5 mA, f = 2 GHz VCE = 1 V, IC = 20 mA, f = 2 GHz VCE = 1 V, IC = 5 mA, f = 2 GHz VCE = 1 V, IC = 20 mA, f = 2 GHz − − 7 7 − 7.5 − 0.5 0.9 10 10 20 9 10 0.7 1.5 − − − − − pF dB dB GHz GHz dB dB |S21e|2 Notes 1. Pulse measurement: PW ≤ 350 μs, Duty Cycle ≤ 2% 2. Collector to base capacitance when the emitter grounded hFE CLASSIFICATION RANK Marking hFE Value FB D7 140 to 220 NESG2107M33 PACKAGE DIMENSIONS 3-PIN SUPER LEAD-LESS MINIMOLD (M33) (UNIT: mm) www.DataSheet4U.com PIN CONNECTIONS 1. Emitter 2. Base 3. Collector Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. 07/01/2004 A Business Partner of NEC Compound Semiconductor Devices, Ltd. 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 www.DataSheet4U.com Telephone: (408) 919-2500 Facsimile: (408) 988-0279 Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive 2003/11/EC Restriction on Penta and Octa BDE. CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals. All devices with these suffixes meet the requirements of the RoHS directive. This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that go into its products as of the date of disclosure of this information. Restricted Substance per RoHS Lead (Pb) Mercury Cadmium Hexavalent Chromium PBB PBDE Concentration Limit per RoHS (values are not yet fixed) < 1000 PPM < 1000 PPM < 100 PPM < 1000 PPM < 1000 PPM < 1000 PPM Concentration contained in CEL devices -A Not Detected Not Detected Not Detected Not Detected Not Detected Not Detected -AZ (*) If you should have any additional questions regarding our devices and compliance to environmental standards, please do not hesitate to contact your local representative. Important Information and Disclaimer: Information provided by CEL on its website or in other communications concerting the substance content of its products represents knowledge and belief as of the date that it is provided. CEL bases its knowledge and belief on information provided by third parties and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. CEL has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemic.


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