POWER MOS 7 FREDFET
APT1101R2BFLL APT1101R2SFLL
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1100V 10A 1.200Ω
D3PAK
TO-247
POWER MOS 7
®
R
FREDFET
Power MOS 7 i...
Description
APT1101R2BFLL APT1101R2SFLL
www.DataSheet4U.com
1100V 10A 1.200Ω
D3PAK
TO-247
POWER MOS 7
®
R
FREDFET
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) ® and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. Lower Input Capacitance Lower Miller Capacitance Lower Gate Charge, Qg Increased Power Dissipation Easier To Drive TO-247 or Surface Mount D3PAK Package FAST RECOVERY BODY DIODE
D G S
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current
1
All Ratings: TC = 25°C unless otherwise specified.
APT1101R2BFLL_SFLL UNIT Volts Amps
1100 10 40 ±30 ±40 298 2.38 -55 to 150 300 10 30
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/°C °C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
1210
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = ...
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