APT11GP60BDQB

TYPICAL PERFORMANCE CURVES APT11GP60BDQB APT11GP60BDQB www.DataSheet4U.com 600V POWER MOS 7 IGBT ® The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. TO-247 G Low Conduction Loss Low Gate Charge Ultrafast Tail Current shutoff MAXIMUM RATINGS Symbol VCES VGE IC1 IC2 ICM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage SSOA rated C E C G E All Ratings: TC = 25°C unless otherwise specified. APT11GP60BDQB UNIT Volts 600 ±20 41 20 45 45A @ 600V 187 -55 to 150 300 Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 100°C Pulsed Collector Current 1 Amps @ TC = 150°C Switching Safe Operating Area @ TJ = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. Watts °C STATIC ELECTRICAL CHARACTERISTICS Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 250µA) Gate Threshold Voltage (VCE = VGE, I C = 1mA, Tj = 25°C) MIN TYP MAX UNIT 600 3 4.5 2.2 2.1 250 µA nA 3-2005 050-7447 Rev A 6 2.7 Collector-Emitter On Voltage (VGE = 15V, I C = 11A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 11A, Tj = 125°C) Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj...