APT11GP60SA

TYPICAL PERFORMANCE CURVES APT11GP60K_SA APT11GP60K APT11GP60SA www.DataSheet4U.com 600V POWER MOS 7 IGBT ® (K) TO-220 (SA) D2PAK The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. C G E G Low Conduction Loss Low Gate Charge Ultrafast Tail Current shutoff MAXIMUM RATINGS Symbol VCES VGE VGEM IC1 IC2 ICM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Gate-Emitter Voltage Transient SSOA rated C E C G E All Ratings: TC = 25°C unless otherwise specified. APT11GP60K_SA UNIT 600 ±20 ±30 41 20 45 45A @ 600V 187 -55 to 150 300 300 Watts °C Amps Volts Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 100°C Pulsed Collector Current 1 @ TC = 150°C Switching Safe Operating Area @ TJ = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS Symbol BVCES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 250µA) Gate Threshold Voltage (VCE = VGE, I C = 1mA, Tj = 25°C) MIN TYP MAX UNIT 600 3 4.5 2.2 2.1 250 µA nA 6-2004 050-7419 Rev B 6 2.7 Collector-Emitter On Voltage (VGE = 15V, I C = 11A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C...