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BUK9Y30-75B
N-channel TrenchMOS™ logic level FET
M3D748
Rev. 01 — 14 July 2004
Product data
1. P...
www.DataSheet4U.com
BUK9Y30-75B
N-channel TrenchMOS™ logic level FET
M3D748
Rev. 01 — 14 July 2004
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect power
transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology.
1.2 Features
s Very low on-state resistance s 175 °C rated s Q101 compliant s Logic level compatible.
1.3 Applications
s Automotive systems s Motors, lamps and solenoids s 12 V, 24 V, and 42 V loads s General purpose power switching.
1.4 Quick reference data
s EDS(AL)S ≤ 89 mJ s ID ≤ 30 A s RDSon = 25 mΩ (typ) s Ptot ≤ 75 W.
2. Pinning information
Table 1: Pin 1,2,3 4 mb Pinning - SOT669 (LFPAK) simplified outline and symbol Description source (s) gate (g) mounting base, connected to drain (d)
mb d
Simplified outline
Symbol
g
1
2
3
4
MBL286
MBL798
s1
s2
s3
Top view
SOT669 (LFPAK)
Philips Semiconductors
BUK9Y30-75B
www.DataSheet4U.com
N-channel TrenchMOS™ logic level FET
3. Ordering information
Table 2: Ordering information Package Name BUK9Y30-75B LFPAK Description Plastic single-ended surface mounted package (Philips version LFPAK); 4 leads Version SOT669 Type number
4. Limiting values
Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) Tmb = 25 °C; VGS = 5 V; Figure 2 and 3 Tmb = 100 °C; VGS = 5 V;...