BUK9Y30-75B

www.DataSheet4U.com BUK9Y30-75B N-channel TrenchMOS™ logic level FET M3D748 Rev. 01 — 14 July 2004 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology. 1.2 Features s Very low on-state resistance s 175 °C rated s Q101 compliant s Logic level compatible. 1.3 Applications s Automotive systems s Motors, lamps and solenoids s 12 V, 24 V, and 42 V loads s General purpose power switching. 1.4 Quick reference data s EDS(AL)S ≤ 89 mJ s ID ≤ 30 A s RDSon = 25 mΩ (typ) s Ptot ≤ 75 W. 2. Pinning information Table 1: Pin 1,2,3 4 mb Pinning - SOT669 (LFPAK) simplified outline and symbol Description source (s) gate (g) mounting base, connected to drain (d) mb d Simplified outline Symbol g 1 2 3 4 MBL286 MBL798 s1 s2 s3 Top view SOT669 (LFPAK) Philips Semiconductors BUK9Y30-75B www.DataSheet4U.com N-channel TrenchMOS™ logic level FET 3. Ordering information Table 2: Ordering information Package Name BUK9Y30-75B LFPAK Description Plastic single-ended surface mounted package (Philips version LFPAK); 4 leads Version SOT669 Type number 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) Tmb = 25 °C; VGS = 5 V; Figure 2 and 3 Tmb = 100 °C; VGS = 5 V;...