(PDF) 48SD6404 Datasheet PDF | Maxwell Technologies





48SD6404 Datasheet PDF

Part Number 48SD6404
Description 256 Mb SDRAM 16-Meg X 4-Bit X 4-Banks
Manufacture Maxwell Technologies
Total Page 30 Pages
PDF Download Download 48SD6404 Datasheet PDF

Features: Datasheet pdf 48SD6404 256 Mb SDRAM www.DataSheet4U.co m 16-Meg X 4-Bit X 4-Banks Logic Diag ram (One Amplifier) Memory FEATURES: • 256 Megabit ( 16-Meg X 4-Bit X 4-Ba nks) • RAD-PAK® radiation-hardened a gainst natural space radiation • Tota l Dose Hardness: >100 krad (Si), depend ing upon space mission • Excellent Si ngle Event Effects: SELTH > 85 MeV/mg/c m2 @ 25° C DESCRIPTION: Maxwell Techn ologies’ Synchronous Dynamic Random A ccess Memory (SDRAM) is ideally suited for space applications requiring high p erformance computing and high density m emory storage. As microprocessors incre ase in speed and demand for higher dens ity memory escalates, SDRAM has proven to be the ultimate solution by providin g bit-counts up to 256 Mega Bits and sp eeds up to 100 Megahertz. SDRAMs repres ent a significant advantage in memory t echnology over traditional DRAMs includ ing the ability to burst data synchrono usly at high rates with automatic colum n-address generation, the ability to interleave between banks masking prech.

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48SD6404 datasheet
48SD6404
256 Mb SDRAMwww.DataSheet4U.com
16-Meg X 4-Bit X 4-Banks
Logic Diagram (One Amplifier)
FEATURES:
• 256 Megabit ( 16-Meg X 4-Bit X 4-Banks)
• RAD-PAK® radiation-hardened against natural space
radiation
• Total Dose Hardness:
>100 krad (Si), depending upon space mission
• Excellent Single Event Effects:
SELTH > 85 MeV/mg/cm2 @ 25°C
• JEDEC Standard 3.3V Power Supply
• Operating Current: 115 mA
• Clock Frequency: 100 MHz Operation
• Operating tremperature: -55 to +125 °C
• Auto Refresh
• Single pulsed RAS
• 2 Burst Sequence variations
Sequential (BL =1/2/4/8)
Interleave (BL = 1/2/4/8)
• Programmable CAS latency: 2/3
• Power Down and Clock Suspend Modes
• LVTTL Compatible Inputs and Outputs
• Package: 72-Pin RAD-PAK® Flat Package
DESCRIPTION:
Maxwell Technologies’ Synchronous Dynamic Random
Access Memory (SDRAM) is ideally suited for space
applications requiring high performance computing and
high density memory storage. As microprocessors
increase in speed and demand for higher density mem-
ory escalates, SDRAM has proven to be the ultimate
solution by providing bit-counts up to 256 Mega Bits and
speeds up to 100 Megahertz. SDRAMs represent a sig-
nificant advantage in memory technology over traditional
DRAMs including the ability to burst data synchronously
at high rates with automatic column-address generation,
the ability to interleave between banks masking pre-
charge time.
Maxwell Technologies’ patented RAD-PAK® packaging
technology incorporates radiation shielding in the micro-
circuit package. It eliminates the need for box shielding
for a lifetime in orbit or space mission. In a typical GEO
orbit, RAD-PAK® provides greater than 100 krads(Si)
radiation dose tolerance. This product is available with
screening up to Maxwell Technologies self-defined Class
K.
01.11.05 Rev 2
(858) 503-3300 - Fax: (858) 503-3301 - www.maxwell.com
All data sheets are subject to change without notice 1
©2005 Maxwell Technologies
All rights reserved.

48SD6404 datasheet
256Mb (16-Meg X 4-Bit X 4-Banks) SDRAM
48SD6404
www.DataSheet4U.com
Pin Descriptions
Pin Name
PKGGND
A0 to A12
BA0, BA1
DQ0 to DQ3
CS\
RAS\
CAS\
WE\
DQM
CLK
CKE
Vcc
Vss
VccQ
VssQ
NC
Function
Package Ground
Address Input
Row Address A0 to A12
Column Address A0 to A9, A11
Bank Select Address BA0/BA1 (BS)
Data-Input/Output
Chip Select
Row Address Strobe
Column Address Strobe
Write Enable
Input/Output Mask
Clock Input
Clock Enable
Power for internal circuits
Ground for internal circuits
Power for DQ circuits
Ground for DQ circuits
No Connection
01.11.05 Rev 2
All data sheets are subject to change without notice 2
©2005 Maxwell Technologies
All rights reserved.





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