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RKS1510DKJ

Renesas Technology

Silicon Epitaxial Planar Diode

RKS1510DKJ www.DataSheet4U.com Silicon Epitaxial Planar Diode for UHF/VHF tuner Band Switch REJ03G0537-0100 Rev.1.00 F...


Renesas Technology

RKS1510DKJ

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RKS1510DKJ www.DataSheet4U.com Silicon Epitaxial Planar Diode for UHF/VHF tuner Band Switch REJ03G0537-0100 Rev.1.00 Feb 23, 2005 Features Low capacitance. (C = 0.8 pF max) Low forward resistance. (rf = 0.7 Ω max) Ultra small Flat Lead Package (UFP) is suitable for surface mount design. Ordering Information Type No. RKS1510DKJ Laser Mark K3 Package Name UFP Package Code (Previous Code) PWFS0002ZA-A (UFP) Pin Arrangement Cathode mark Mark 1 K3 2 1. Cathode 2. Anode Rev.1.00 Feb 23, 2005 page 1 of 4 RKS1510DKJ Absolute Maximum Ratings Item Reverse voltage Power dissipation Junction temperature Storage temperature Symbol VR Pd Tj Tstg Value 35 150 125 −55 to +125 www.DataSheet4U.com (Ta = 25°C) Unit V mW °C °C Electrical Characteristics (Ta = 25°C) Item Reverse current Forward voltage Capacitance Forward resistance Symbol IR VF C rf Min — — — — Typ — — — — Max 50 1.0 0.8 0.7 Unit nA V pF Ω Test Condition VR = 25 V IF = 10 mA VR = 6 V, f = 1 MHz IF = 2 mA, f = 100 MHz Rev.1.00 Feb 23, 2005 page 2 of 4 RKS1510DKJ Main Characteristic 10–2 10–3 Reverse current IR (A) Forward current IF (A) www.DataSheet4U.com 10–7 10–8 10–9 10–10 10–11 10–12 10–13 10–14 10–4 10–5 10–6 10–7 10–8 10–9 0 0.2 0.4 0.6 0.8 1.0 0 10 20 30 40 50 Forward voltage VF (V) Fig.1 Forward current vs. Forward voltage Reverse voltage VR (V) Fig.2 Reverse current vs. Reverse voltage 10 f = 1MHz 10 f = 100MHz Forward resistance rf (Ω) Capacitance C (pF) 1.0 1.0 0.1 0.1 1...




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