Silicon Epitaxial Planar Diode
RKS1510DKJ
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Silicon Epitaxial Planar Diode for UHF/VHF tuner Band Switch
REJ03G0537-0100 Rev.1.00 F...
Description
RKS1510DKJ
www.DataSheet4U.com
Silicon Epitaxial Planar Diode for UHF/VHF tuner Band Switch
REJ03G0537-0100 Rev.1.00 Feb 23, 2005
Features
Low capacitance. (C = 0.8 pF max) Low forward resistance. (rf = 0.7 Ω max) Ultra small Flat Lead Package (UFP) is suitable for surface mount design.
Ordering Information
Type No. RKS1510DKJ Laser Mark K3 Package Name UFP Package Code (Previous Code) PWFS0002ZA-A (UFP)
Pin Arrangement
Cathode mark Mark
1
K3
2
1. Cathode 2. Anode
Rev.1.00 Feb 23, 2005 page 1 of 4
RKS1510DKJ
Absolute Maximum Ratings
Item Reverse voltage Power dissipation Junction temperature Storage temperature Symbol VR Pd Tj Tstg Value 35 150 125 −55 to +125
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(Ta = 25°C)
Unit V mW °C °C
Electrical Characteristics
(Ta = 25°C)
Item Reverse current Forward voltage Capacitance Forward resistance Symbol IR VF C rf Min — — — — Typ — — — — Max 50 1.0 0.8 0.7 Unit nA V pF Ω Test Condition VR = 25 V IF = 10 mA VR = 6 V, f = 1 MHz IF = 2 mA, f = 100 MHz
Rev.1.00 Feb 23, 2005 page 2 of 4
RKS1510DKJ
Main Characteristic
10–2 10–3
Reverse current IR (A)
Forward current IF (A)
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10–7 10–8 10–9 10–10 10–11 10–12 10–13 10–14
10–4 10–5 10–6 10–7 10–8 10–9
0
0.2
0.4
0.6
0.8
1.0
0
10
20
30
40
50
Forward voltage VF (V) Fig.1 Forward current vs. Forward voltage
Reverse voltage VR (V) Fig.2 Reverse current vs. Reverse voltage
10
f = 1MHz
10
f = 100MHz
Forward resistance rf (Ω)
Capacitance C (pF)
1.0
1.0
0.1 0.1
1...
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