PBSS5520X

DISCRETE SEMICONDUCTORS www.DataSheet4U.com DATA SHEET book, halfpage M3D109 PBSS5520X 20 V, 5 A PNP low VCEsat (BISS) transistor Product specification Supersedes data of 2004 Jun 23 2004 Nov 08 Philips Semiconductors www.DataSheet4U.com Product specification 20 V, 5 A PNP low VCEsat (BISS) transistor FEATURES High hFE and low VCEsat at high current operation High collector current IC: 5 A High efficiency leading to less heat generation. APPLICATIONS Medium power peripheral drivers (e.g. fans and motors) Strobe flash units for digital still cameras and mobile phones Power switch for LAN and ADSL systems Medium power DC-to-DC conversion Battery chargers Supply line switching. DESCRIPTION PNP low VCEsat (BISS) transistor in a SOT89 (SC-62) plastic package. NPN complement: PBSS4520X. PINNING PIN 1 2 3 emitter collector base QUICK REFERENCE DATA SYMBOL VCEO IC ICM RCEsat PARAMETER PBSS5520X MAX. −20 −5 −10 54 UNIT V A A mΩ collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance DESCRIPTION 2 3 MARKING TYPE NUMBER PBSS5520X Note 1. * = p: made in Hong Kong. * = t: made in Malaysia. * = W: made in China. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME PBSS5520X SC-62 DESCRIPTION plastic surface mounted package; collector pad for good heat transfer; 3 leads VERSION SOT89 Fig.1 Simplified outline (SOT89) and symbol. MARKING CODE(1) *1K 3 2 1 1 sym079 2004 Nov 08 2 Philips Semiconductors www.DataSheet4U.com Produ...