BUK9Y11-30B

BUK9Y11-30B N-channel TrenchMOS logic level FET Rev. 01 — 30 August 2007 www.DataSheet4U.com Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. 1.2 Features I Very low on-state resistance I 175 °C rated I Q101 compliant I Logic level compatible 1.3 Applications I Automotive systems I Motors, lamps and solenoids I General purpose power switching I 12 V loads 1.4 Quick reference data I EDS(AL)S ≤ 112 mJ I ID ≤ 59 A I RDSon = 9.3 mΩ (typ) I Ptot ≤ 75 W 2. Pinning information Table 1. Pin 4 mb Pinning Description gate (G) mounting base; connected to drain (D) G Simplified outline mb Symbol D 1, 2, 3 source (S) 1 2 3 4 mbl798 S1 S2 S3 SOT669 (LFPAK) NXP Semiconductors BUK9Y11-30B www.DataSheet4U.com N-channel TrenchMOS logic level FET 3. Ordering information Table 2. Ordering information Package Name BUK9Y11-30B LFPAK Description plastic single-ended surface-mounted package (LFPAK); 4 leads Version SOT669 Type number 4. Limiting values Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VDGR VGS ID IDM Ptot Tstg Tj IDR IDRM EDS(AL)S Parameter drain-source voltage drain-gate voltage (DC) gate-source voltage drain current peak drain current total power dissipation storage temperature junction temperature reverse drain current peak reverse drain current non-r...