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APT100GT60JRDL

Microsemi Corporation

Resonant Mode Combi IGBT

www.DataSheet4U.com APT100GT60JRDL 600V, 100A, VCE(ON) = 2.1V Typical Resonant Mode Combi IGBT® The Thunderbolt IGBT® ...


Microsemi Corporation

APT100GT60JRDL

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www.DataSheet4U.com APT100GT60JRDL 600V, 100A, VCE(ON) = 2.1V Typical Resonant Mode Combi IGBT® The Thunderbolt IGBT® used in this Resonant Mode Combi is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed. E E G C 7 22 T SO "UL Recognized" file # E145592 Features Low Forward Voltage Drop Low Tail Current Integrated Gate Resistor Low EMI, High Reliability Ultra soft recovery diode RBSOA and SCSOA Rated High Frequency Switching to 50KHz Ultra Low Leakage Current Typical Applications ISOTOP ® ZVS Phase Shifted Bridge Resonant Mode Switching Phase Shifted Bridge Welding Induction heating High Frequency SMPS G E C Low forward Diode Voltage (VF) RoHS Compliant Maximum Ratings Symbol Parameter VCES VGE IC1 IC2 ICM SSOA PD TJ, TSTG Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 100°C Pulsed Collector Current 1 Switching Safe Operating Area @ TJ = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range All Ratings: TC = 25°C unless otherwise specified. Ratings 600 Volts ±30 148 80 300 300A @ 600V 500 -55 to 150 Watts °C Amps Unit Static Electrical Characteristics Symbol Characteristic / Test Conditions V(BR)CES VGE(TH) VCE(ON) Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 4mA) Gate Threshold Voltage (VCE = VGE, IC = 2.0mA, Tj = 2...




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