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APTGF100DU120T Dataheets PDF



Part Number APTGF100DU120T
Manufacturers Advanced Power Technology
Logo Advanced Power Technology
Description Dual common source NPT IGBT Power Module
Datasheet APTGF100DU120T DatasheetAPTGF100DU120T Datasheet (PDF)

APTGF100DU120T Dual common source NPT IGBT Power Module VCES = 1200V IC = 100A @ Tc = 80°C Application · AC Switches · Switched Mode Power Supplies · Uninterruptible Power Supplies C1 C2 www.DataSheet4U.com Q1 G1 Q2 G2 E1 E2 NTC1 E NTC2 G2 E2 C2 C1 E C2 E1 G1 E2 G2 NTC2 NTC1 Features · Non Punch Through (NPT) FAST IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy r.

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APTGF100DU120T Dual common source NPT IGBT Power Module VCES = 1200V IC = 100A @ Tc = 80°C Application · AC Switches · Switched Mode Power Supplies · Uninterruptible Power Supplies C1 C2 www.DataSheet4U.com Q1 G1 Q2 G2 E1 E2 NTC1 E NTC2 G2 E2 C2 C1 E C2 E1 G1 E2 G2 NTC2 NTC1 Features · Non Punch Through (NPT) FAST IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated · Kelvin emitter for easy drive · Very low stray inductance - Symmetrical design - Lead frames for power connections · Internal thermistor for temperature monitoring · High level of integration Benefits · Outstanding performance at high frequency operation · Stable temperature behavior · Very rugged · Direct mounting to heatsink (isolated package) · Low junction to case thermal resistance · Solderable terminals both for power and signal for easy PCB mounting · Easy paralleling due to positive TC of VCEsat · Low profile Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area Tc = 25°C Tc = 80°C Tc = 25°C Tc = 25°C Tj = 150°C APTGF100DU120T – Rev 1 March, 2004 Max ratings 1200 150 100 300 ±20 568 300A @ 1200V Unit V A V W These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1-6 APTGF100DU120T All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic BVCES Collector - Emitter Breakdown Voltage ICES VCE(on) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter on Voltage Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V, IC = 750 µA Tj = 25°C VGE = 0V VCE = 1200V Tj = 125°C T j = 25°C VGE =15V IC = 100A Tj = 125°C VGE = VCE, IC = 2 mA VGE = 20 V, VCE = 0V Min 1200 Typ Max 750 3750 3.7 6.5 150 Unit V µA V V nA www.DataSheet4U.com 3.2 4.0 4.5 Dynamic Characteristics Symbol Cies Coes Cres Qg Qge Qgc Td(on) Tr Td(off) Tf Eon Eoff Td(on) Tr Td(off) Tf Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Emitter Charge Gate – Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy u Turn-off Switching Energy v Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy u Turn-off Switching Energy v Test Conditions VGE = 0V VCE = 25V f = 1MHz VGS = 15V VBus = 600V IC = 100A Inductive Switching (25°C) VGE = 15V VBus = 600V IC = 100A RG = 2.5 W Min Typ 6900 660 440 660 70 400 35 65 320 30 10.8 4.6 35 65 360 40 13.9 6.1 Max Unit pF nC ns mJ Inductive Switching (125°C) VGE = 15V VBus = 600V IC = 100A RG = 2.5 W ns mJ Reverse diode ratings and characteristics Symbol Characteristic Maximum Average Forward Current IF(AV) VF Diode Forward Voltage Test Conditions 50% duty cycle Min Tc = 70°C IF = 120A IF = 240A IF = 120A IF = 120A VR = 800V di/dt =800A/µs IF = 120A VR = 800V di/dt =800A/µs Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Typ 120 2.0 2.3 1.8 370 500 2.64 13.8 Max 2.5 Unit A V APTGF100DU120T – Rev 1 March, 2004 trr Qrr Reverse Recovery Time Reverse Recovery Charge ns µC u Eon includes diode reverse recovery v In accordance with JEDEC standard JESD24-1 APT website – http://www.advancedpower.com 2-6 APTGF100DU120T Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque To heatsink Package Weight IGBT Diode 2500 -40 -40 -40 M5 150 125 100 4.7 160 Min Typ Max 0.22 0.32 Unit °C/W V °C N.m g www.DataSheet4U.com Temperature sensor NTC Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.16 K RT = R25 T: Thermistor temperature é æ 1 1 öù RT: Thermistor value at T expê B25 / 85 ç çT - T ÷ ÷ú è 25 øû ë Min Typ 68 4080 Max Unit kW K Package outline APT website – http://www.advancedpower.com 3-6 APTGF100DU120T – Rev 1 March, 2004 APTGF100DU120T Typical Performance Curve 400 Ic, Collector Current (A) 320 240 160 80 0 0 2 4 6 VCE, Collector to Emitter Voltage (V) Transfer Characteristics VGE, Gate to Emitter Voltage (V) 18 16 14 12 10 8 6 4 2 0 0 100 200 300 400 500 600 700 Gate Charge (nC) On state Voltage vs Junction Temperature 6 5 4 3 2 1 0 -50 -25 0 25 50 75 100 TJ, Junction Temperature (°C) 125 Ic=50A 250µs Pulse Test < 0.5% Duty cycle VGE = 15V 250µs Pulse Test < 0.5% Duty cycle www.DataSheet4U.com Output characteristics (VGE=15V) 250µs Pulse Test < 0.5% Duty cycle 100 Ic, Collector Current (A) Output Characteristics (VGE=10V) 250µs .


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