APTGF200U120D

APTGF200U120D Single Switch with Series diodes NPT IGBT Power Module EK E C www.DataSheet4U.com VCES = 1200V IC = 200A @ Tc = 80°C Application Zero Current Switching resonant mode Features Non Punch Through (NPT) FAST IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated Kelvin emitter for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration Benefits Outstanding performance at high frequency operation Stable temperature behavior Very rugged Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Easy paralleling due to positive TC of VCEsat Low profile G CK E CK C EK G Absolute maximum ratings Symbol VCES IC ICM VGE PD SSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Tc = 25°C Tc = 80°C Tc = 25°C Tc = 25°C Tj = 150°C Max ratings 1200 275 200 600 ±20 1136 600A @ 1200V Unit V A V W APTGF200U120D – Rev 0 July, 2004 Switching Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1–6 APTGF200U120D All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic BVCES Coll...