APTGF200U120DG

APTGF200U120DG Single Switch with Series diodes NPT IGBT Power Module EK E C www.DataSheet4U.com VCES = 1200V IC = 200A @ Tc = 80°C Application Zero Current Switching resonant mode Features Non Punch Through (NPT) FAST IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated Kelvin emitter for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration Benefits Outstanding performance at high frequency operation Stable temperature behavior Very rugged Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Easy paralleling due to positive TC of VCEsat Low profile RoHS compliant Max ratings 1200 275 200 600 ±20 1136 400A @ 1200V Unit V A V W G CK E CK C EK G Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Tc = 25°C Tc = 80°C Tc = 25°C Tc = 25°C Tj = 150°C Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–6 APTGF200U120DG – Rev 1 July, 2006 APTGF200U120DG All ratings @ Tj = 25°C unless otherwise specified Electrical ...