Document
APTGF300A120G
Phase leg NPT IGBT Power Module
VBUS Q1 G1
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VCES = 1200V IC = 300A @ Tc = 80°C
Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Non Punch Through (NPT) FAST IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration Benefits • Outstanding performance at high frequency operation • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • Low profile • RoHS Compliant Max ratings 1200 400 300 600 ±20 1780 600A @ 1200V Unit V A V W
APTGF300A120G – Rev 2 July, 2006
E1
OUT
Q2 G2
E2 0/VBUS
G1 E1
VBUS
0/VBUS
OUT
E2 G2
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA
Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Tc = 25°C Tc = 80°C Tc = 25°C Tc = 25°C Tj = 150°C
Reverse Bias Safe Operating Area
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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APTGF300A120G
All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter saturation Voltage Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions Tj = 25°C VGE = 0V VCE = 1200V Tj = 125°C T VGE =15V j = 25°C IC = 300A Tj = 125°C VGE = VCE, IC = 12mA VGE = ±20V, VCE = 0V Min Typ Max 500 750 3.9 6.5 ±1 Unit µA V V µA
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3.3 4 4.5
Dynamic Characteristics
Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy
Test Conditions VGE = 0V VCE = 25V f = 1MHz Inductive Switching (25°C) VGE = 15V VBus = 600V IC = 300A R G = 3Ω Inductive Switching (125°C) VGE = 15V VBus = 600V IC = 300A R G = 3Ω VGE = 15V Tj = 125°C VBus = 600V IC = 300A Tj = 125°C R G = 3Ω Test Conditions Tj = 25°C Tj = 125°C Tc = 80°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C
Min
Typ 21 2.9 1.52 120 50 310 30 130 60 360 40 25
Max
Unit nF
ns
ns
mJ 15
Reverse diode ratings and characteristics
Symbol Characteristic VRRM IRM IF VF trr Qrr Er
Maximum Peak Repetitive Reverse Voltage
Min 1200
Typ
Max 250 500
Unit V µA A V ns
APTGF300A120G – Rev 2 July, 2006
Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy
VR=1200V
IF = 300A
IF = 300A VR = 600V
di/dt =4500A/µs
300 2.1 1.9 120 210 22 43 7 15
µC mJ
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APTGF300A120G
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink For terminals M6 M5 IGBT Diode 2500 -40 -40 -40 3 2 Min Typ Max 0.07 0.12 150 125 100 5 3.5 280 Unit °C/W V °C N.m g
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RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
SP6 Package outline (dimensions in mm)
See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com
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APTGF300A120G – Rev 2 July, 2006
APTGF300A120G
Typical Performance Curve
Output Characteristics (V GE=15V) Output Characteristics 600 500 400 IC (A)
VGE =12V TJ = 125°C VGE =20V VGE =15V
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600 500
IC (A)
TJ=25°C
400 300 200 100 0 0 1 2 3 V CE (V) 4 5 6
T J=125°C
300 200 100 0 0 1 2 3 4 V CE (V) 5 6
VGE=9V
Transfert Characteristics 600 500 400 E (mJ) IC (A) 300 200 100 0 5 6 7 8 9 10 11 12 VGE (V) Switching Energy Losses vs Gate Resistance 100 80 E (mJ) 60 40 20 0 0 2 4 6 8 10 12 14 16 18 20 Gate Resistance (ohms)
VCE = 600V VGE =15V IC = 300A T J = 125°C Eon TJ=25°C TJ=125°C
Energy losses vs Collector Current 70 60 50 40 30 20 10 0 0 100 200 300 IC (A) Reverse Bias Safe Operating Area 700 600 500 IC (A) 400 300 200
Er VGE =15V TJ =125°C RG=3 Ω Eoff Er VCE = 600V VGE = 15V RG = 3 Ω T J = 125°C Eon
Eoff
400
500
600
Eoff
100 0 0
300
600
900
1200
1500
VCE (V)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.08 Thermal Impedance (°C/W) 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0.9 0.7 0.5 0.3 0.1 0.05 0..