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APTGF30TL60T3G

Microsemi Corporation

Three level inverter NPT IGBT Power Module

APTGF30TL60T3G www.DataSheet4U.com Three level inverter NPT IGBT Power Module VCES = 600V IC = 30A @ Tc = 80°C Applicat...


Microsemi Corporation

APTGF30TL60T3G

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APTGF30TL60T3G www.DataSheet4U.com Three level inverter NPT IGBT Power Module VCES = 600V IC = 30A @ Tc = 80°C Application Solar converter Uninterruptible Power Supplies Features Non Punch Through (NPT) Fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 100 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated Kelvin emitter for easy drive Very low stray inductance High level of integration Internal thermistor for temperature monitoring 28 27 26 25 29 30 23 22 20 19 18 16 15 31 32 2 3 4 7 8 10 11 12 14 13 Benefits Stable temperature behavior Very rugged Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Easy paralleling due to positive TC of VCEsat Low profile RoHS Compliant All multiple inputs and outputs must be shorted together Example: 10/11/12 ; 7/8 … Q1 to Q4 Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25°C TC = 80°C TC = 25°C TC = 25°C Tj = 125°C Max ratings 600 42 30 100 ±20 140 60A@500V Unit V March, 2009 1-8 APTGF30TL60T3G – Rev 0 A V W These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com APTGF30TL60T3G www.DataS...




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