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APTGF50DH120T3G

Microsemi Corporation

Asymmetrical - Bridge NPT IGBT Power Module

APTGF50DH120T3G Asymmetrical - Bridge NPT IGBT Power Module 13 14 www.DataSheet4U.com VCES = 1200V IC = 50A @ Tc = 80°...


Microsemi Corporation

APTGF50DH120T3G

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Description
APTGF50DH120T3G Asymmetrical - Bridge NPT IGBT Power Module 13 14 www.DataSheet4U.com VCES = 1200V IC = 50A @ Tc = 80°C Application AC and DC motor control Switched Mode Power Supplies Q1 CR1 18 CR3 22 19 23 7 8 Q4 CR2 CR4 4 3 29 15 30 31 32 16 R1 Features Non Punch Through (NPT) Fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated - Symmetrical design Kelvin emitter for easy drive Very low stray inductance High level of integration Internal thermistor for temperature monitoring Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile Easy paralleling due to positive TC of VCEsat RoHS compliant 28 27 26 25 29 30 23 22 20 19 18 16 15 31 32 2 3 4 7 8 10 11 12 14 13 All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 … Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area Tc = 25°C Tc = 80°C Tc = 25°C Tc = 25°C Tj = 150°C Max ratings 1200 70 50 150 ±20 312 100A @ 1200V Unit V A V W April, 2009 1-7 APTGF50DH120T3G – Rev 0...




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