Asymmetrical - Bridge NPT IGBT Power Module
APTGF50DH120T3G
Asymmetrical - Bridge NPT IGBT Power Module
13 14
www.DataSheet4U.com
VCES = 1200V IC = 50A @ Tc = 80°...
Description
APTGF50DH120T3G
Asymmetrical - Bridge NPT IGBT Power Module
13 14
www.DataSheet4U.com
VCES = 1200V IC = 50A @ Tc = 80°C
Application AC and DC motor control Switched Mode Power Supplies
Q1 CR1 18 CR3
22 19 23
7
8 Q4
CR2
CR4
4
3
29 15
30
31
32 16
R1
Features Non Punch Through (NPT) Fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated - Symmetrical design Kelvin emitter for easy drive Very low stray inductance High level of integration Internal thermistor for temperature monitoring Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile Easy paralleling due to positive TC of VCEsat RoHS compliant
28 27 26 25 29 30
23 22
20 19 18 16 15
31 32 2 3 4 7 8 10 11 12
14 13
All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 …
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area Tc = 25°C Tc = 80°C Tc = 25°C Tc = 25°C Tj = 150°C Max ratings 1200 70 50 150 ±20 312 100A @ 1200V Unit V A V W
April, 2009 1-7 APTGF50DH120T3G – Rev 0...
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