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APTGF50DH60T1G

Microsemi Corporation

Asymmetrical - Bridge NPT IGBT Power Module

APTGF50DH60T1G Asymmetrical - Bridge NPT IGBT Power Module VCES = 600V IC = 50A* @ Tc = 80°C www.DataSheet4U.com Appli...



APTGF50DH60T1G

Microsemi Corporation


Octopart Stock #: O-669497

Findchips Stock #: 669497-F

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APTGF50DH60T1G Asymmetrical - Bridge NPT IGBT Power Module VCES = 600V IC = 50A* @ Tc = 80°C www.DataSheet4U.com Application Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control Features Non Punch Through (NPT) Fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 100 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated Very low stray inductance - Symmetrical design Internal thermistor for temperature monitoring High level of integration Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile RoHS Compliant Pins 3/4 must be shorted together Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25°C TC = 80°C TC = 25°C TC = 25°C Tj = 125°C Max ratings 600 65* 50* 230 ±20 250 100A @ 500V Unit V A April, 2009 1–7 APTGF50DH60T1G – Rev 0 V W * Specification of IGBT device but output current must be limited to 40A to not exceed a delta of temperature greater than 35°C for the connectors. These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followe...




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