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APTGF50DU120TG

Microsemi Corporation

Dual common source NPT IGBT Power Module

APTGF50DU120TG Dual common source NPT IGBT Power Module VCES = 1200V IC = 50A @ Tc = 80°C Application • AC Switches • Sw...


Microsemi Corporation

APTGF50DU120TG

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Description
APTGF50DU120TG Dual common source NPT IGBT Power Module VCES = 1200V IC = 50A @ Tc = 80°C Application AC Switches Switched Mode Power Supplies Uninterruptible Power Supplies C1 Q1 G1 C2 www.DataSheet4U.com Q2 G2 E1 E2 NT C1 E NT C2 G2 E2 C2 C1 E C2 E1 G1 E2 G2 NTC2 NTC1 Features Non Punch Through (NPT) Fast IGBT® - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated Kelvin emitter for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections Internal thermistor for temperature monitoring High level of integration Benefits Outstanding performance at high frequency operation Stable temperature behavior Very rugged Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Easy paralleling due to positive TC of VCEsat Low profile RoHS compliant Max ratings 1200 75 50 150 ±20 312 100A @ 1200V Unit V July, 2006 1-6 APTGF50DU120TG – Rev 2 Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Tc = 25°C Tc = 80°C Tc = 25°C Tc = 25°C Tj = 150°C A V W Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area These Devices are sensitive to E...




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