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APTGF50H60T3G

Microsemi Corporation

Full - Bridge NPT IGBT Power Module

APTGF50H60T3G Full - Bridge NPT IGBT Power Module 13 14 www.DataSheet4U.com VCES = 600V IC = 50A @ Tc = 80°C Applicati...


Microsemi Corporation

APTGF50H60T3G

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Description
APTGF50H60T3G Full - Bridge NPT IGBT Power Module 13 14 www.DataSheet4U.com VCES = 600V IC = 50A @ Tc = 80°C Application Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control Features Non Punch Through (NPT) Fast IGBT® - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated - Symmetrical design Kelvin emitter for easy drive Very low stray inductance High level of integration Internal thermistor for temperature monitoring Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile Easy paralleling due to positive TC of VCEsat Each leg can be easily paralleled to achieve a phase leg of twice the current capability RoHS compliant Max ratings 600 65 50 230 ±20 250 100A @ 500V Unit V July, 2006 1-6 APTGF50H60T3G – Rev 2 Q1 18 19 CR1 CR3 Q3 11 10 22 23 Q2 7 8 CR4 Q4 26 27 CR2 4 3 29 15 30 31 R1 32 16 28 27 26 25 29 30 23 22 20 19 18 16 15 31 32 2 3 4 7 8 10 11 12 14 13 All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 … Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current ...




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