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APTGF75DH120T Dataheets PDF



Part Number APTGF75DH120T
Manufacturers Advanced Power Technology
Logo Advanced Power Technology
Description Asymmetrical - Bridge NPT IGBT Power Module
Datasheet APTGF75DH120T DatasheetAPTGF75DH120T Datasheet (PDF)

APTGF75DH120T Asymmetrical - Bridge NPT IGBT Power Module VBUS VBUS SENSE Q1 G1 CR3 www.DataSheet4U.com VCES = 1200V IC = 75A @ Tc = 80°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Non Punch Through (NPT) FAST IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin em.

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APTGF75DH120T Asymmetrical - Bridge NPT IGBT Power Module VBUS VBUS SENSE Q1 G1 CR3 www.DataSheet4U.com VCES = 1200V IC = 75A @ Tc = 80°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Non Punch Through (NPT) FAST IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • Internal thermistor for temperature monitoring • High level of integration Benefits • Outstanding performance at high frequency operation • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Easy paralleling due to positive TC of VCEsat • Low profile E1 OUT1 O UT2 Q4 G4 CR2 E4 0/VBUS SENSE NTC1 0/VBUS NT C2 VBUS SENSE G4 E4 OUT2 VBUS 0/VBUS OUT1 E1 G1 0/VBUS SENSE NTC2 NTC1 Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area Tc = 25°C Tc = 80°C Tc = 25°C Tc = 25°C Tj = 150°C A V W 150A @ 1200V These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1-5 APTGF75DH120T – Rev 0 January, 2005 Parameter Collector - Emitter Breakdown Voltage Max ratings 1200 100 75 150 ±20 500 Unit V APTGF75DH120T All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES VCE(on) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter on Voltage Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions Tj = 25°C VGE = 0V VCE = 1200V Tj = 125°C T VGE =15V j = 25°C IC = 75A Tj = 125°C VGE = VCE, IC = 2.5 mA VGE = ±20V, VCE = 0V Min Typ 0.1 4 3.2 3.9 Max 2 3.7 6.5 ±500 Unit mA V V nA www.DataSheet4U.com 4.5 Dynamic Characteristics Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGE = 0V VCE = 25V f = 1MHz Inductive Switching (25°C) VGE = 15V VBus = 600V IC = 75A R G = 7.5Ω Inductive Switching (125°C) VGE = 15V VBus = 600V IC = 75A R G = 7.5Ω Min Typ 5.1 0.7 0.4 120 50 310 20 130 60 360 30 9 4 Max Unit nF ns ns mJ Reverse diode ratings and characteristics Symbol Characteristic VRRM IRM IF(A V) VF Maximum Peak Repetitive Reverse Voltage Test Conditions Tj = 25°C Tj = 125°C Tc = 70°C Min 1200 Typ Max 250 5.


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