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APTGF75DH120TG

Microsemi Corporation

Asymmetrical - Bridge NPT IGBT Power Module

APTGF75DH120TG Asymmetrical - Bridge NPT IGBT Power Module VBUS VBUS SENSE Q1 G1 CR3 www.DataSheet4U.com VCES = 1200V ...


Microsemi Corporation

APTGF75DH120TG

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Description
APTGF75DH120TG Asymmetrical - Bridge NPT IGBT Power Module VBUS VBUS SENSE Q1 G1 CR3 www.DataSheet4U.com VCES = 1200V IC = 75A @ Tc = 80°C Application Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control Features Non Punch Through (NPT) Fast IGBT® - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated Kelvin emitter for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections Internal thermistor for temperature monitoring High level of integration Benefits Outstanding performance at high frequency operation Stable temperature behavior Very rugged Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Easy paralleling due to positive TC of VCEsat Low profile RoHS compliant Max ratings 1200 100 75 150 ±20 500 150A @ 1200V Unit V APTGF75DH120TG – Rev 1 July, 2006 E1 OUT1 O UT2 Q4 G4 CR2 E4 0/VBUS SENSE NTC1 0/VBUS NT C2 VBUS SENSE G4 E4 OUT2 VBUS 0/VBUS OUT1 E1 G1 0/VBUS SENSE NTC2 NTC1 Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Tc = 25°C Tc = 80°C Tc = 25...




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