D2045

Darlington sAbsolute maximum ratings Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SD2045 120 120 6 6(Pulse10) 1 50(Tc=25°C) 150 –55 to +150 2SD2045 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=120V VEB=6V IC=10mA VCE=2V, IC=3A IC=3A, IB=3mA IC=3A, IB=3mA VCE=12V, IE=–1A VCB=10V, f=1MHz 2SD2045 10max 10max 120min 2000min 1.5max 2.0max 50typ 70typ V V 16.2 Equivalent circuit B C www.DataSheet4U.com (2.5k Ω)(200 Ω) E Silicon NPN Triple Diffused Planar Transistor (Ta=25°C) Unit V V V A A W °C °C Application : Driver for Solenoid, Motor and General Purpose (Ta=25°C) Unit External Dimensions FM100(TO3PF) 0.8±0.2 15.6±0.2 5.5±0.2 3.45 ±0.2 5.5 ø3.3±0.2 1.6 µA mA 23.0±0.3 V 9.5±0.2 a b MHz pF 1.75 2.15 1.05 +0.2 -0.1 5.45±0.1 1.5 4.4 5.45±0.1 1.5 0.65 +0.2 -0.1 3.3 0.8 sTypical Switching Characteristics (Common Emitter) VCC (V) 30 RL (Ω) 10 IC (A) 3 VBB1 (V) 10 VBB2 (V) –5 IB1 (mA) 3 IB2 (mA) –3 ton (µs) 0.5typ tstg (µs) 5.5typ tf (µs) 1.5typ 3.35 B C E Weight : Approx 2.0g a. Type No. b. Lot No. I C – V CE Characteristics (Typical) 6 20mA V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s a t) (V ) 3 I C – V BE Temperature Characteristics (Typical) (V C E =2V) 6 A A 5m 2m 1 mA 0.7m A 5 Collector Current I C (A) 5 Collector Current I C (A) 4 0.5m A 2 4 p) Cas 2 1 2 25˚C 2A 1 ˚C ( 1 0 0 1 2 3 4 5 6 0 0.1 0.5 1 5 10 50 100 0 0 1 Base-E...