AWT6133

AWT6133 PCS/CDMA 3.5V/29dBm www.DataSheet4U.com Linear Power Amplifier Module Data Sheet - Rev 2.0 FEATURES InGaP HBT Technology High Efficiency: 38% Low Quiescent Current: 50 mA Low Leakage Current in Shutdown Mode: <1 µA VREF = +2.85 V (+2.7 V min over temp) Optimized for a 50 Ω System Low Profile Miniature Surface Mount Package: 1.56 mm Max CDMA 1XRTT Compliant CDMA 1xEV-DO Compliant APPLICATIONS PCS CDMA Wireless Handsets Dual Band CDMA Wireless Handsets M7 Package 10 Pin 4 mm x 4 mm x 1.5 mm Surface Mount Module PRODUCT DESCRIPTION The AWT6133 meets the increasing demands for higher efficiency and linearity in CDMA 1XRTT handsets. The PA module is optimized for VREF = +2.85 V, a requirement for compatibility with the Qualcomm® 6000 chipset. The device is manufactured on an advanced InGaP HBT MMIC technology offering state-of-the-art reliability, temperature stability, and ruggedness. Selectable bias modes that optimize efficiency for different output power levels, and a shutdown mode with low leakage current, increase handset talk and standby time. The self-contained 4 mm x 4 mm x 1.5 mm surface mount package incorporates matching networks optimized for output power, efficiency, and linearity in a 50 Ω system. GND at slug (pad) VCC RFIN GND 1 2 3 Bias Control 10 VCC 9 8 7 6 GND RFOUT GND GND VMODE 4 VREF 5 Figure 1: Block Diagram 12/2004 AWT6133 GND VCC RFIN GND VMODE VREF 1 2 3 4 5 GND www.DataSheet4U.com 10 VCC 9 8 7 6 GND RFOUT GND G...