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AWT6135 Dataheets PDF



Part Number AWT6135
Manufacturers ANADIGICS
Logo ANADIGICS
Description PCS/CDMA 3.4V/28dBm Linear Power Amplifier
Datasheet AWT6135 DatasheetAWT6135 Datasheet (PDF)

AWT6135 PCS/CDMA 3.4V/28dBm www.DataSheet4U.com Linear Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.1 FEATURES • • • • • • • • • InGaP HBT Technology High Efficiency: 40% Low Quiescent Current: 48 mA Low Leakage Current in Shutdown Mode: <1 µA VREF = +2.8 V (+2.7 V min over temp) Optimized for a 50 Ω System Low Profile Miniature Surface Mount Package: 1.56mm Max CDMA 1XRTT Compliant CDMA 1xEV-DO Compliant APPLICATIONS • • PCS CDMA Wireless Handsets Dual Band CDMA Wireless Handsets M7.

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AWT6135 PCS/CDMA 3.4V/28dBm www.DataSheet4U.com Linear Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.1 FEATURES • • • • • • • • • InGaP HBT Technology High Efficiency: 40% Low Quiescent Current: 48 mA Low Leakage Current in Shutdown Mode: <1 µA VREF = +2.8 V (+2.7 V min over temp) Optimized for a 50 Ω System Low Profile Miniature Surface Mount Package: 1.56mm Max CDMA 1XRTT Compliant CDMA 1xEV-DO Compliant APPLICATIONS • • PCS CDMA Wireless Handsets Dual Band CDMA Wireless Handsets M7 Package 10 Pin 4mm x 4mm Surface Mount Module PRODUCT DESCRIPTION The AWT6135 meets the increasing demands for higher efficiency and linearity in CDMA 1XRTT handsets. The PA module is optimized for VREF = +2.8 V, a requirement for compatibility with the Qualcomm® 6000 chipset. The device is manufactured on an advanced InGaP HBT MMIC technology offering state-of-the-art reliability, temperature stability, and ruggedness. Selectable bias modes that optimize efficiency for different output power levels, and a shutdown mode with low leakage current, increase handset talk and standby time. The self-contained 4mm x 4mm surface mount package incorporates matching networks optimized for output power, efficiency, and linearity in a 50 Ω system. GND at slug (pad) VCC RFIN GND 1 2 3 Bias Control 10 VCC 9 8 7 6 GND RFOUT GND GND VMODE 4 VREF 5 Figure 1: Block Diagram 08/2003 AWT6135 GND VCC RFIN GND VMODE VREF 1 2 3 4 5 GND www.DataSheet4U.com 10 VCC 9 8 7 6 GND RFOUT GND GND Figure 2: Pinout (X-ray Top View) Table 1: Pin Description PIN 1 2 3 4 5 6 7 8 9 10 NAME V CC RFIN GND VMODE VREF GND GND RFOUT GND V CC DESCRIPTION Supply Voltage RF Input Ground Mode Control Voltage Reference Voltage Ground Ground RF Output Ground Supply Voltage 2 PRELIMINARY DATA SHEET - Rev 1.1 08/2003 AWT6135 ELECTRICAL CHARACTERISTICS Table 2: Absolute Minimum and Maximum Ratings www.DataSheet4U.com PARAMETER Supply Voltage (VCC) Mode Control Voltage (VMODE) Reference Voltage (VREF) RF Input Power (PIN) Storage Temperature (TSTG) MIN 0 0 0 -40 MAX +5 +3.5 +3.5 +10 +150 UNIT V V V dB m °C Stresses in excess of the absolute ratings may cause permanent damage. Functional operation is not implied under these conditions. Exposure to absolute ratings for extended periods of time may adversely affect reliability. Table 3: Operating Ranges PARAMETER Operating Frequency (f) Supply Voltage (VCC) Reference Voltage (VREF) Mode Control Voltage (VMODE) RF Output Power (POUT) Case Temperature (TC) MIN 1850 +3.2 +2.7 0 +2.5 0 +27.5(1) -30 TYP +3.4 +2.8 +2.8 +28.0 MAX 1910 +4.2 +2.9 +0.5 +3.1 +0.5 +85 UNIT MHz V V V dB m °C PA "on" PA "shut down" Low Bias Mode High Bias Mode COMMENTS The device may be operated safely over these conditions; however, parametric performance is guaranteed only over the conditions defined in the electrical specifications. Notes: (1) For operation at TC = +85 °C and VCC = +3.2 V, POUT is derated by 0.5 dB. PRELIMINARY DATA SHEET - Rev 1.1 08/2003 3 AWT6.


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